BC847BPDXV6,
SBC847BPDXV6
NPN/PNP Dual General
Purpose Transistor
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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(3)
(2)
(1)
Q1
Q2
MAXIMUM RATINGS − NPN
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
45
V
Collector −Base Voltage
VCBO
50
V
Emitter −Base Voltage
VEBO
6.0
V
IC
100
mAdc
Collector Current −
Continuous
(4)
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−45
V
Collector −Base Voltage
VCBO
−50
V
Emitter −Base Voltage
VEBO
−5.0
V
IC
−100
mAdc
Collector Current −
Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
Junction and Storage Temperature Range
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
Unit
357
2.9
mW
mW/°C
6
54
12
3
SOT−563
CASE 463A
MARKING DIAGRAM
1
4F MG
G
4F = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC847BPDXV6T1G
°C/W
350
(6)
BC847BPDX6T1
MAXIMUM RATINGS − PNP
Rating
(5)
Package
Shipping†
SOT−563
4 mm pitch
(Pb−Free) 4000/Tape & Reel
SBC847BPDXV6T1G SOT−563
2 mm pitch
(Pb−Free) 4000/Tape & Reel
Max
Unit
500
4.0
mW
mW/°C
°C/W
250
−55 to
+150
BC847BPDXV6T5G
SOT−563
2 mm pitch
(Pb−Free) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
°C
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
BC847BPDXV6T1/D
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
45
−
−
50
−
−
50
−
−
6.0
−
−
−
−
−
−
15
5.0
−
200
150
290
−
475
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 μA, VEB = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
V
V
V
V
nA
μA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 μA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
−
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
pF
−
−
10
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
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2
NF
dB
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
−45
−
−
−50
−
−
−50
−
−
−5.0
−
−
−
−
−
−
−15
−4.0
−
200
150
290
−
475
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Characteristic
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 μA, VEB = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ICBO
V
V
V
V
nA
μA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 μA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
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3
BC847BPDXV6, SBC847BPDXV6
TYPICAL NPN CHARACTERISTICS
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cib
3.0
Cob
2.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
100
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
1.0
50 70 100
Figure 2. “Saturation” and “On” Voltages
2.0
0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
40
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 5. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 6. Current−Gain − Bandwidth Product
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4
50
BC847BPDXV6, SBC847BPDXV6
TYPICAL PNP CHARACTERISTICS
-1.0
1.5
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
-0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
Figure 7. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
0
-0.02
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 10. Base−Emitter Temperature
Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 9. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
Figure 8. “Saturation” and “On” Voltages
-2.0
-0.8
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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