BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
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NPN Duals
(3)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
(2)
Q1
Q2
(4)
Features
(5)
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
(1)
(6)
BC847CDXV6T1
Site and Control Change Requirements
These are Pb−Free Devices
6
1
SOT−563
CASE 463A
MAXIMUM RATINGS
Symbol
BC847
BC848
Unit
Collector − Emitter Voltage
Rating
VCEO
45
30
V
Collector − Base Voltage
VCBO
50
30
V
Emitter − Base Voltage
VEBO
6.0
5.0
V
IC
100
100
mAdc
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Max
Unit
357
2.9
mW
mW/°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
350
°C/W
Symbol
Max
Unit
500
4.0
mW
mW/°C
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage
Temperature Range
1
1x
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Characteristic
(Both Junctions Heated)
1x M G
G
M
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
MARKING DIAGRAMS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1
Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
45
30
−
−
−
−
50
30
−
−
−
−
50
30
−
−
−
−
6.0
5.0
−
−
−
−
−
−
−
−
15
5.0
−
420
270
520
−
800
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)EBO
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
Collector Cutoff Current (VCB = 30 V)
ICBO
(VCB = 30 V, TA = 150°C)
V
V
V
V
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
−
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
1.5
pF
−
−
10
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
dB
ORDERING INFORMATION
Device
Specific Marking
Package
1G
SOT−563
(Pb−Free)
1L
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
BC847CDXV6T1G
SBC847CDXV6T1G
BC847CDXV6T5G
BC848CDXV6T1G
Shipping†
8000 Units / Tape & Reel
4000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
1000
0.30
VCE = 1 V
150°C
800
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
900
700
600
25°C
500
400
−55°C
300
200
100
0
0.001
0.01
0.1
0.6
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
−55°C
25°C
150°C
0.3
0.2
0.10
Figure 1. DC Current Gain vs. Collector
Current
0.5
0.4
25°C
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.7
0.15
IC, COLLECTOR CURRENT (A)
0.9
0.8
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
0.1
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
40
20
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 7. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
100 mS
10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
30
Figure 8. Current−Gain − Bandwidth Product
1
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
TA = 25°C
5.0
100
Figure 6. Base−Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 5. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
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4
100
50
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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