DATA SHEET
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NPN Silicon
Epitaxial Transistor
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
BCP56 Series
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
COLLECTOR 2,4
BASE
1
Features
EMITTER 3
• High Current: 1.0 A
• The SOT−223 package can be soldered using wave or reflow. The
•
•
•
•
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Collector−Base Voltage
VCBO
100
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
IC
1
Adc
Collector Current − Peak (Note 1)
ICM
2
Adc
Total Power Dissipation
@ TA = 25°C (Note 2)
Derate above 25°C
PD
Operating and Storage
Temperature Range
Collector Current
12
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
4
1.5
12
W
mW/°C
TJ, Tstg
−65 to 150
°C
Symbol
Max
Unit
RqJA
83.3
°C/W
260
10
°C
Sec
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Reference SOA curve.
2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
© Semiconductor Components Industries, LLC, 2016
November, 2022 − Rev. 15
1
Publication Order Number:
BCP56T1/D
BCP56 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
100
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−
−
100
nAdc
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
−
10
mAdc
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
Characteristics
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
All Part Types
BCP56
BCP56−10
BCP56−16
All Types
(IC = 500 mA, VCE = 2.0 V)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.5
Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
−
−
1.0
Vdc
Rise Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA)
tr
−
14
−
ns
Delay Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA)
td
−
9
−
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA)
ts
−
714
−
ns
Fall Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA)
tf
−
58
−
ns
fT
−
130
−
MHz
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
VCE = 2 V
TA = 150°C
125°C
25°C
100
- 55°C
- 65°C
10
0.1
10
IC, COLLECTOR CURRENT (mA)
1
100
1000
1000
80
60
TJ = 25°C
C, CAPACITANCE (pF)
f,
T CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
40
Cibo
20
10
8.0
6.0
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Cobo
4.0
0.1
1000
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain − Bandwidth Product
1.2
IC/IB = 10
1.1
150°C
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
100
Figure 3. Capacitance
1
25°C
−55°C
0.1
0.01
50
0.001
0.01
0.1
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
1
IC/IB = 10
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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3
1
BCP56 Series
1.2
1.1
VCE = 2 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
TJ = 25°C
0.8
IC = 10mA
0.6
50
mA
250mA
500mA
0.4
0.2
0
0.05
0.1
1.0 2.0
0.5
5.0
IB, BASE CURRENT (mA)
0.2
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
10
20
50
Figure 7. Collector Saturation Region
1
1.6
1 mS
1S
1.4
PD, POWER DISSIPATION (W)
IC, COLLECTOR CURRENT (A)
100mA
100 mS
10 mS
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10
100
0.0
0
20
VCE, COLLECTOR EMITTER VOLTAGE (V)
100
40
60
80
120
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Safe Operating Area
Figure 9. Power Derating Curve
140
160
100
50% Duty Cycle
RT (°C/W)
10
20%
10%
5%
1
2%
1%
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 10. Thermal Response
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4
1
10
100
1000
BCP56 Series
ORDERING INFORMATION
Device
BCP56T1G
Marking
Package
Shipping†
BH
SOT−223
(Pb−Free)
1000 / Tape & Reel
BH
SOT−223
(Pb−Free)
4000 / Tape & Reel
BH−10
SOT−223
(Pb−Free)
1000 / Tape & Reel
BH−10
SOT−223
(Pb−Free)
4000 / Tape & Reel
BH−16
SOT−223
(Pb−Free)
1000 / Tape & Reel
BH−16
SOT−223
(Pb−Free)
4000 / Tape & Reel
SBCP56T1G*
BCP56T3G
SBCP56T3G*
BCP56−10T1G
SBCP56−10T1G*
BCP56−10T3G
NSVBCP56−10T3G*
BCP56−16T1G
SBCP56−16T1G*
BCP56−16T3G
SBCP56−16T3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
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5
BCP56 Series
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
q
q
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6
BCP56 Series
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