Ordering number : EN6292C
SBE001
Schottky Barrier Diode
http://onsemi.com
30V, 2A, Low IR, Single CPH6
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
•
• Halogen free compliance
Low forward voltage (VF max=0.55V)
Fast reverse recovery time (trr max=20ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall-sized package, permitting SBE001-applied sets to be compact and slim (0.9mm)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
V
Average Output Current
IO
2
A
Surge Forward Current
IFSM
20
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
50Hz sine wave, 1 cycle
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-012
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
Packing Type: TL Marking
0.9
1
2
0.95
LOT No.
SA
0.05
1.6
0.2
0.6
2.8
0.2
0.6
6
SBE001-TL-E
SBE001-TL-W
0.15
2.9
TL
3
0.4
1 : Cathode
2 : Cathode
3 : No contact
4 : Anode
5 : Cathode
6 : Cathode
Electrical Connection
6
5
4
1
2
3
CPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
52714HK TC-00002917/90512TKIM/63004TSIM/80699GI(KT) No.6292-1/4
SBE001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Conditions
VR
VF
IR=500µA
IF=2A
IR
C
VR=15V
VR=10V, f=1MHz
trr
Rth(j-a)
IF=IR=100mA, See specified Test Circuit.
Ratings
min
typ
max
30
V
0.55
V
100
mA
70
When mounted on ceramic substrate (600mm2×0.8mm)
Unit
pF
20
110
ns
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Cicuit
50Ω
100Ω
10Ω
100mA
10µs
10mA
100mA
Duty≤10%
--5V
trr
Ordering Information
Package
Shipping
memo
SBE001-TL-E
Device
CPH6
3,000pcs./reel
Pb-Free
SBE001-TL-W
CPH6
3,000pcs./reel
Pb-Free and Halogen Free
No.6292-2/4
SBE001
IF -- VF
10
Ta
=1
25
°C
1.0
25°
C
7
5
3
2
5
3
2
Ta=125°C
1.0
100°C
5
3
2
0.1
75°C
5
3
2
50°C
0.01
0.1
5
3
2
7
5
0.001
5
0
0.2
0.4
0.6
0.8
PF(AV) -- IO
2.5
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(3) Sine wave θ=180°
2.0
θ
(3)
(2)
(1)
360°
1.0
1.2
IT00617
Sine wave
0.5
180°
360°
0
0.5
1.0
1.5
25°C
0
--5
--10
--15
2.0
Average Forward Current, IO -- A
2.5
IFSM -- t
3.0
IT00619
--20
--25
Reverse Voltage, VR -- V
C -- VR
5
(4)
Rectangular wave
1.5
0
1.0
Forward Voltage, VF -- V
24
Surge Forward Current, IFSM(Peak) -- A
Reverse Current, IR -- mA
3
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
Forward Current, IF -- A
7
5
2
IR -- VR
10
--30
--35
HD00618
f=1MHz
3
2
100
7
5
3
2
10
--1.0
2
3
5
7
--10
2
3
Reverse Voltage, VR -- V
5
7 --100
IT00620
Current waveform 50Hz sine wave
Is
20
20ms
t
16
12
8
4
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00621
No.6292-3/4
SBE001
Outline Drawing
SBE001-TL-E, SBE001-TL-W
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
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PS No.6292-4/4