SBF720T1G

BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com NPN SILICON TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 300 Vdc Collector −Base Voltage VCBO 300 Vdc Collector −Emitter Voltage VCER 300 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current Total Power Dissipation up to TA = 25C PD 1.5 W Storage Temperature Range Tstg −65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RqJA 83.3 SOT−223 (TO−261) CASE 318E STYLE 1 COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) AYW DC G G C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 1 A Y W DC G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BF720T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SBF720T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel BF720T3G SOT−223 (Pb−Free) 4,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BF720T1/D BF720T1G, SBF720T1G, BF720T3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max 300 − 300 − 300 − 5.0 − − 10 − − 50 10 50 − − 0.6 60 − − 1.6 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (IC = 100 mAdc, RBE = 2.7 kW) V(BR)CER Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 kW) (VCE = 200 Vdc, RBE = 2.7 kW, TJ = 150C) ICER Vdc Vdc Vdc Vdc nAdc nAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) VCE(sat) − Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) Cre http://onsemi.com 2 MHz pF BF720T1G, SBF720T1G, BF720T3G 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 f, T CURRENT-GAIN — BANDWIDTH (MHz) 80 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 70 60 50 40 30 20 10 1.0 1000 TJ = 25C VCE = 20 V f = 20 MHz Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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