SBRA8160NT3G

DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 60 VOLTS SS16T3G, SBRA8160T3G, SBRA8160NT3G These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. SMA CASE 403D PLASTIC MARKING DIAGRAM Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection SBRA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Device Meets MSL 1 Requirements © Semiconductor Components Industries, LLC, 2012 August, 2023 − Rev. 10 1 SS16 AYWWG SS16 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† SS16T3G SMA (Pb−Free) 5,000 / Tape & Reel SBRA8160T3G* SMA (Pb−Free) 5,000 / Tape & Reel SBRA8160NT3G* SMA (Pb−Free) 5,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: SS16/D SS16T3G, SBRA8160T3G, SBRA8160NT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 105°C) Symbol Value Unit VRRM VRWM VR 60 V IO A 1.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 40 Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt V/ms 10,000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 35 86 °C/W 1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) Symbol Value Unit VF TJ = 25°C V 0.51 0.72 IR Maximum Instantaneous Reverse Current (VR = 60 V) TJ = 25°C TJ = 100°C 0.2 5.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 SS16T3G, SBRA8160T3G, SBRA8160NT3G TYPICAL CHARACTERISTICS 10 10 TJ = 150°C 5.0 TJ = 150°C 100°C I R , REVERSE CURRENT (mA) 7.0 25°C 5.0 3.0 1.0 100°C 0.5 0.2 0.1 75°C 0.05 0.02 0.01 25°C 0.005 0.002 0.001 0.7 0 40 20 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 0.5 70 60 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 5.0 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) 0.1 0.07 0.05 0.03 0.02 0 SQUARE WAVE 4.0 3.0 dc p 2.0 5 10 IPK/IAV = 20 1.0 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0 1.6 1.0 2.0 3.0 4.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation 200 TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 2.0 125°C 2.0 1.0 100 80 70 60 50 40 30 20 0 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance www.onsemi.com 3 90 100 5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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