Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
SS16T3G,
SBRA8160T3G,
SBRA8160NT3G
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These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
60 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
SBRA8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
SS16
AYWWG
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
•
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Meets MSL 1 Requirements
SS16
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Package
Shipping†
SS16T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel
SBRA8160T3G*
SMA
(Pb−Free)
5,000 /
Tape & Reel
SBRA8160NT3G*
SMA
(Pb−Free)
5,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2019 − Rev. 9
1
Publication Order Number:
SS16/D
SS16T3G, SBRA8160T3G, SBRA8160NT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
1.0
IFSM
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
40
A
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJL
RqJA
35
86
°C/W
1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A)
(IF = 1.0 A)
Symbol
Value
Unit
VF
TJ = 25°C
V
0.51
0.72
IR
Maximum Instantaneous Reverse Current
(VR = 60 V)
TJ = 25°C
TJ = 100°C
0.2
5.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
SS16T3G, SBRA8160T3G, SBRA8160NT3G
TYPICAL CHARACTERISTICS
10
10
TJ = 150°C
5.0
TJ = 150°C
100°C
I R , REVERSE CURRENT (mA)
7.0
25°C
5.0
3.0
1.0
100°C
0.5
0.2
0.1
75°C
0.05
0.02
0.01
25°C
0.005
0.002
0.001
0.7
0
40
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
10
0.5
70
60
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if VR is sufficiently below rated VR.
0.3
0.2
5.0
PF(AV) , AVERAGE FORWARD
POWER DISSIPATION (WATTS)
0.1
0.07
0.05
0.03
0.02
0
SQUARE
WAVE
4.0
3.0
dc
p
2.0
5
10
IPK/IAV = 20
1.0
0
0.2
0.4
0.6
0.8
1.2
1.0
1.4
0
1.6
1.0
2.0
3.0
4.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage
Figure 3. Forward Power Dissipation
200
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
2.0
125°C
2.0
1.0
100
80
70
60
50
40
30
20
0
10
20
30
40
50
60
70
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
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3
90
100
5.0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
STYLE 1
SMA
CASE 403D
ISSUE J
STYLE 2
SCALE 1:1
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DATE 22 OCT 2021
STYLE 2:
NO POLARITY
GENERIC
MARKING DIAGRAM*
xxxx
AYWWG
STYLE 1
xxxx
A
Y
WW
G
xxxx
AYWWG
STYLE 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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