Switch-mode
Power Rectifier
DPAK Surface Mount Package
MBRD835L, SBRD8835L
This switch−mode power rectifier which uses the Schottky Barrier
principle with a proprietary barrier metal, is designed for use as output
rectifiers, free wheeling, protection and steering diodes in switching
power supplies, inverters and other inductive switching circuits.
Features
•
•
•
•
•
•
•
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Compact Size
Lead Formed for Surface Mount
SBRD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES, 35 VOLTS
DPAK
CASE 369C
1
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 75 Units Per Plastic Tube
ESD Rating:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
4
3
AYWW
B
835LG
B835LG
A
Y
WW
G
= Specific Device Number
= Assembly Location*
= Year
= Work Week
= Pb−Free Device
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRD835LG
DPAK
(Pb−Free)
75 Units / Rail
SBRD8835LG
DPAK
(Pb−Free)
75 Units / Rail
SBRD8835LG−VF01
DPAK
(Pb−Free)
75 Units / Rail
MBRD835LT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SBRD835LT4G−VF01
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SBRD8835LT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SBRD8835LT4G−VF01
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure BRD8011/D
© Semiconductor Components Industries, LLC, 2012
August, 2020 − Rev. 13
1
Publication Order Number:
MBRD835L/D
MBRD835L, SBRD8835L
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
35
V
Average Rectified Forward Current
(TC = 88°C)
IF(AV)
Peak Repetitive Forward Current
(Square Wave, Duty = 0.5, TC = 80°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax)
IAR
Storage / Operating Case Temperature
Tstg
−65 to +150
TJ
−65 to +150
°C
dv/dt
10,000
V/s
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
8.0
16
75
2.0
A
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance − Junction−to−Case
RJC
2.8
°C/W
Thermal Resistance − Junction−to−Ambient (Note 2)
RJA
80
°C/W
Symbol
Value
Unit
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 8 Amps, TC = + 25°C)
(iF = 8 Amps, TC = +125°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = + 25°C)
(Rated dc Voltage, TC = +100°C)
IR
0.51
0.41
1.4
35
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.
www.onsemi.com
2
MBRD835L, SBRD8835L
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (mA)
TYPICAL CHARACTERISTICS
10
TJ = 125°C
25°C
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
10
TJ = 125°C
1
75°C
0.1
25°C
0.01
0
Figure 1. Maximum Forward Voltage
0.1
0.2
0.3
0.4
0.5
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
Figure 2. Typical Forward Voltage
1000
TJ = 125°C
10
100°C
I R, REVERSE CURRENT (mA)
I R, REVERSE CURRENT (mA)
100
100
1
25°C
0.1
TJ = 125°C
100°C
10
1
75°C
0.1
0.01
0.001
25°C
0
5
10
15
20
25
VF, REVERSE VOLTAGE (VOLTS)
30
0.01
35
0
Figure 3. Maximum Reverse Current
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 4. Typical Reverse Current
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3
35
MBRD835L, SBRD8835L
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25°C
TYPICAL
MAXIMUM
1000
100
1
10
VR, REVERSE VOLTAGE (VOLTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Maximum and Typical Capacitance
16
14.4
TJ = 125°C
12.8
RJA = 6°C/W
dc
(RESISTIVE LOAD)
11.2
9.6
SQUARE WAVE
(CAPACITIVE
IPK
+5
LOAD)
IAV
8
6.4
4.8
10
3.2
1.6
0
20
80
85
90
95 100 105 110 115
TC, CASE TEMPERATURE (°C)
120
125
130
8
TJ = 125°C
7
dc
6
(RESISTIVE LOAD)
5
P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
4
TJ = 125°C
(RESISTIVE LOAD)
3.5
3
SQUARE WAVE
2.5
RJA = 80°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+5
LOAD)
IAV
2
1.5
10
1
20
0.5
0
0
10
20
(CAPACITIVE
IPK
+5
LOAD)
IAV
SQUARE WAVE
3
2
10
1
20
0
0
10
20
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating
5
dc
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
4
Figure 6. Current Derating, Infinite Heatsink
4.5
RJA = 40°C/W
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
8
TJ = 125°C
7
(RESISTIVE LOAD)
(CAPACITIVE
IPK
+5
LOAD)
IAV
6
SQUARE WAVE
dc
5
10
4
20
3
2
1
0
0
Figure 8. Current Derating, Free Air
1.5
3
4.5
6
7.5
9 10.5 12 13.5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Forward Power Dissipation
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4
15
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
B
c2
4
L3
Z
D
1
L4
C
A
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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