SBRS8120NT3G

Surface Mount Schottky Power Rectifier MBRS120T3G, SBRS8120T3G, SBRS8120N This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 20 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band SMB CASE 403A MARKING DIAGRAM AYWW B12G G B12 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS120T3G SMB (Pb−Free) 2 500 / Tape & Reel SBRS8120T3G* SMB (Pb−Free) 2 500 / Tape & Reel SBRS8120NT3G* SMB (Pb−Free) 2 500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2019 − Rev. 9 1 Publication Order Number: MBRS120T3/D MBRS120T3G, SBRS8120T3G, SBRS8120N MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 V Average Rectified Forward Current (TL = 115°C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature A 1.0 A 40 TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (TL = 25°C) Value RθJL Unit °C/W 12 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR Value Unit V 0.6 mA 1.0 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%. 1 0.7 0.5 TC = 100°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 TC = 25°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 TJ = 125°C 100°C 75°C 25°C 0 4 8 12 16 20 24 28 32 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2 36 40 MBRS120T3G, SBRS8120T3G, SBRS8120N 200 180 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 36 32 40 VR, REVERSE VOLTAGE (VOLTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 10 RATED VOLTAGE APPLIED RθJC = 12°C/W TJ = 125°C 9 8 7 6 5 4 DC 3 SQUARE WAVE 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (°C) 110 120 130 Figure 4. Current Derating (Case) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 160 5 DC SQUARE WAVE TJ = 125°C 4 π 5 3 CAPACITANCE LOAD 2 IPK IAV 10 = 20 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Power Dissipation www.onsemi.com 3 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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