SBRS8130LNT3G

Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Features • • • • • • • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) Small Compact Surface Mountable Package with J−Bend Leads Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Characteristics • Case: Epoxy, Molded • Weight: 100 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Cathode Polarity Band SMB CASE 403A MARKING DIAGRAM AYWW 1BL3G G 1BL3 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRS130LT3G SMB (Pb−Free) 2,500 / Tape & Reel SBRS8130LT3G* SMB (Pb−Free) 2,500 / Tape & Reel SBRS8130LT3G−VF01* SMB (Pb−Free) 2,500 / Tape & Reel SBRS8130LNT3G* SMB (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2019 − Rev. 11 1 Publication Order Number: MBRS130LT3/D MBRS130LT3G, SBRS8130LT3G, SBRS8130LN MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current TL = 120°C TL = 110°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature A 1.0 2.0 A 40 TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead YJL Thermal Resistance, Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper) Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper) RqJA Value Unit °C/W 12 °C/W 228.8 71.3 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Value Unit V 0.395 0.445 mA 1.0 10 10 TJ = 100°C 1 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS VOLTAGE (V) 0.7 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. 10 TJ = 100°C 1 25°C 0.1 0 Figure 1. Typical Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 VF, MAXIMUM INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage www.onsemi.com 2 0.7 IR, IREVERSE CURRENT (mA) IR, IREVERSE CURRENT (mA) MBRS130LT3G, SBRS8130LT3G, SBRS8130LN 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 0 3 6 9 12 15 18 21 24 27 0 30 3 6 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 100 105 110 115 120 125 130 TC, CASE TEMPERATURE (°C) 24 27 30 0.7 0.6 0.5 SQUARE 0.4 0.3 DC 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Typical Power Dissipation NOTE: TYPICAL CAPACITANCE AT 0 V = 290 pF 350 300 250 200 150 100 50 0 4 21 0.8 400 0 18 0.9 Figure 5. Current Derating (Case) C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) DC 1.4 1.2 15 Figure 4. Typical Maximum Reverse Leakage Curent 2 1.6 12 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Leakage Current 1.8 9 8 12 16 20 24 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance www.onsemi.com 3 28 32 EFFECTIVE TRANSIENT THERMAL RESISTANCE MBRS130LT3G, SBRS8130LT3G, SBRS8130LN 1000 100 D = 0.5 0.2 0.1 0.05 10 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.01 t, TIME (s) 0.001 0.1 1 10 100 1000 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Min Pad 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.0001 0.00001 0.001 0.1 0.01 t, TIME (s) Figure 9. Thermal Response, 1 Inch Pad 2.0 250 1.8 225 1.6 POWER DISSIPATION (W) 275 qJA (°C/W) 200 175 150 125 100 1.0 oz 75 2.0 oz 50 1.0 oz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 0 2.0 oz Power based on TA = 25°C 0 100 200 300 400 500 600 700 0 0 100 200 300 400 500 600 700 COPPER AREA (mm2) COPPER AREA (mm2) Figure 10. Thermal Resistance vs. Copper Area Figure 11. Power Dissipation vs. Copper Area www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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