SBSP52T1G

NPN Small-Signal Darlington Transistor BSP52T1G, BSP52T3G, SBSP52T1G This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • The SOT-223 Package can be soldered using wave or reflow. The • • • • formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP52T1 to Order the 7 Inch/1000 Unit Reel PNP Complement is BSP62T1 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Max Unit Collector-Emitter Voltage VCES 80 V Collector-Base Voltage VCBO 90 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 0.8 6.4 W mW/°C Total Power Dissipation (Note 2) @ TA = 25°C Derate above 25°C PD 1.25 10 W mW/°C −65 to 150 °C Rating Operating and Storage Temperature Range TJ, Tstg 2 AYW AS3G G 3 SOT−223 CASE 318E STYLE 1 A = Assembly Location Y = Year W = Work Week AS3 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) Package Shipping† BSP52T1G, SBSP52T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BSP52T3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device Symbol Value Unit Thermal Resistance (Note 1) Junction-to-Ambient RqJA 156 °C/W Thermal Resistance (Note 2) Junction-to-Ambient RqJA 100 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath 1 MARKING DIAGRAM ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 4 TL 260 10 °C Sec †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. 2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad. © Semiconductor Components Industries, LLC, 2012 July, 2021 − Rev. 10 1 Publication Order Number: BSP52T1/D BSP52T1G, BSP52T3G, SBSP52T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max 90 − − 5.0 − − − − 10 − − 10 1000 2000 − − − − − − 1.3 − − 1.9 − 155 − − 205 − − 420 − − 365 − Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 mA, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector-Emitter Cutoff Current (VCE = 80 V, VBE = 0) ICES Emitter-Base Cutoff Current (VEB = 4.0 V, IC = 0) IEBO V V mA mA ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 150 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) hFE Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 0.5 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = 500 mA, IB = 0.5 mA) VBE(sat) − V V SWITCHING CHARACTERISTICS Rise Time (VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA) tr Delay Time (VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA) td Storage Time (VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA) ts Fall Time (VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA) tf 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% www.onsemi.com 2 ns ns ns ns BSP52T1G, BSP52T3G, SBSP52T1G TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 1000000 TJ = 150°C 100000 TJ = 25°C 10000 TJ = −55°C 1000 100 0.01 0.1 1 100 10 1000 IC, COLLECTOR CURRENT (mA) 3.5 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V 10000 2.5 2.0 1.5 0.5 0 0.01 VBE(on), BASE−EMITTER ON VOLTAGE (V) TJ = −55°C 1.2 TJ = 25°C TJ = 150°C 1 0.1 10 100 1000 10000 C, CAPACITANCE (pF) 2.0 VCE = 10 V 1.8 TJ = −55°C 1.6 1.4 TJ = 25°C 1.2 1.0 0.8 TJ = 150°C 0.6 0.4 0.2 0 0.01 0.1 1 10 100 1000 Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter ON Voltage CIBO 1 0.1 10 IC, COLLECTOR CURRENT (mA) 100 10 1 IC, COLLECTOR CURRENT (mA) COBO 1 10 100 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 2.0 0 0.01 0.1 Figure 2. Collector−Emitter Saturation Voltage IC/IB = 1000 0.4 TJ = −55°C IC, COLLECTOR CURRENT (A) 2.4 0.8 TJ = 25°C TJ = 150°C 1.0 Figure 1. DC Current Gain 1.6 IC/IB = 1000 3.0 250 10000 VCE = 2 V 230 TJ = 25°C 210 190 170 150 130 110 90 70 50 10 100 1000 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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