MOSFET - Power,
Single P-Channel, SOT-23
-50 V, 10 W
BSS84L, BVSS84L,
SBSS84L
• SOT−23 Surface Mount Package Saves Board Space
• BV Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
−50 V
10 W @ −10 V
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
−130
−520
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance − Junction−to−Ambient
RqJA
556
°C/W
Thermal Resistance − Junction−to−Ambient
(Note 1)
RqJA
377.2
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
P−Channel
1
mA
2
3
SOT−23
CASE 318
STYLE 21
1
2
MARKING DIAGRAM & PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. And the RqJA is determined by the user’s
board design. The maximum rating presented here is based on mounting the
part on JEDEC Standard 51−3/51−7.
3
Drain
PD MG
G
1
Gate
PD
M
G
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BSS84LT1G,
BVSS84LT1G,
SBSS84LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BSS84LT7G
SOT−23
(Pb−Free)
3,500 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
December, 2020 − Rev. 13
1
Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L, SBSS84L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
−50
−
−
Vdc
−
−
−
−
−
−
−0.1
−15
−60
−
±10
nAdc
Vdc
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Zero Gate Voltage Drain Current
(VDS = −25 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA)
VGS(th)
−0.9
−
−2.0
Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc)
RDS(on)
−
4.7
10
W
|yfs|
50
−
−
mS
pF
mAdc
ON CHARACTERISTICS (Note 2)
Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 5.0 Vdc
Ciss
−
36
−
Output Capacitance
VDS = 5.0 Vdc
Coss
−
17
−
Transfer Capacitance
VDG = 5.0 Vdc
Crss
−
6.5
−
td(on)
−
3.6
−
tr
−
9.7
−
td(off)
−
12
−
tf
−
1.7
−
QT
−
2.2
−
nC
IS
−
−
−0.130
A
ISM
−
−
−0.520
VSD
−
−
−2.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
Fall Time
Gate Charge
VDD = −40 Vdc, ID = −0.5 A,
VGS = −10 V
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 3)
VGS = 0 V, IS = −130 mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
25°C
VDS = 10 V
0.5
- 55°C
150°C
0.4
0.3
0.2
0.1
0
1
1.5
2
2.5
3
3.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
-3.25 V
0.4
0.35
0.3
-3.0 V
0.25
0.2
-2.75 V
0.15
-2.5 V
0.1
-2.25 V
0.05
0
4
VGS = -3.5 V
TJ = 25°C
0.45
0
1
2
3
4
5
6
7
8
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
9
10
BSS84L, BVSS84L, SBSS84L
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
9
VGS = -4.5 V
8
150°C
7
6
25°C
5
4
-55°C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
7
150°C
VGS = -10 V
6.5
6
5.5
5
4.5
4
25°C
3.5
3
-55°C
2.5
2
0
0.2
0.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VGS = -10 V
ID = -0.52 A
1.4
VGS = -4.5 V
ID = -0.13 A
1.2
1
0.8
-5
45
95
-8
-6
-5
-4
ID = -0.5 A
-3
-2
-1
0
145
VDS = -40 V
TJ = 25°C
-7
0
1000
500
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
1
TJ = 150°C
0.1
25°C
-55°C
0.01
0.001
0
0.5
1500
QT, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
2
0.6
-55
0.6
0.5
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
1.6
0.4
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
1.8
0.3
1.0
1.5
2.0
2.5
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
3.0
2000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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