SBT100-10G

SBT100-10G Ordering number : ENA0689 SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Tj=150°C. Short reverse recovery time. Low switching noise. High reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Symbol Conditions Ratings VRRM VRSM Average Output Current IO Surge Forward Current IFSM Unit 100 V 105 V 50Hz resistive load, Sine wave Tc=73°C 10 A 50Hz sine wave, 1 cycle 60 A Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage VR Forward Voltage VF Reverse Current IR Interterminal Capacitance Thermal Resistance C Rth(j-c) Conditions IR=1mA, Tj=25°C* IF=3.5A, Tj=25°C* VR=50V, Tj=25°C* VR=10V, Tj=25°C* Ratings min typ max 100 Unit V 0.88 V 100 µA 4.6 °C / W 90 Junction-Case : Smoothed DC pF Note) * : Value per element Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71107SD TI IM TC-00000802 No. A0689-1/3 SBT100-10G Package Dimensions Electrical Connection unit : mm (typ) 7507-003 Anode Anode 4.5 10.2 3.6 1.3 6.3 2.7 5.1 (5.6) 18.0 15.1 Cathode 14.0 1.2 0.8 0.4 1 2 3 2.7 1 : Anode 2 : Cathode 3 : Anode 2.55 SANYO : TO-220 IF -- VF 5 3 2 7 5 0°C Tj=15 25°C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 max 0°C yp °C t 150 15 Tj= 3 2 10 p y °C t 125 7 5 p 100 3 y °C t 2 1.0 7 5 3 2 3 0.01 1.0 1.5 2.0 Forward Voltage, VF -- V Sine wave 18 180° 16 (1) 360° 14 (2) (4) (3) Rectangular wave 12 10 θ 360° 8 6 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 4 2 0 0 2 4 6 8 Average Output Current, IO -- A 40 10 12 IT12075 60 80 100 Reverse Voltage, VR -- V IT08511 PF(AV) -- IO 20 20 0 2.5 Average Reverse Power Dissipation, PR(AV) -- W 0.5 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 100 Represented by max Reverse Current, IR -- mA Forward Current, IF -- A 2.55 120 IT08512 PR(AV) -- VRM 7.0 PR max at Tj=150°C (1) (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 6.5 6.0 5.5 5.0 (2) Rectangular wave 4.5 4.0 VR 3.5 360° 3.0 2.5 (3) θ Sine wave 2.0 (4) VR 1.5 180° 360° 1.0 0.5 0 0 20 40 60 80 Peak Reverse Voltage, VRM -- V 100 120 IT08514 No. A0689-2/3 SBT100-10G Tc -- IO 130 Rectangular wave 100 θ Interterminal Capacitance, C -- pF Case Temperature, Tc -- °C f=100kHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 150 360° 90 Sine wave 70 360° 180° 2 50 0 (2) (4) (3) (1) 4 6 8 Surge Forward Current, IFSM(Peak) -- A 70 IS 20ms t 50 40 30 20 10 0 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 100 7 5 3 5 2 3 ID01025 7 1.0 2 3 5 7 10 2 3 5 Reverse Voltage, VR -- V IT12076 IFSM -- t 7 0.01 2 12 Current waveform 50Hz sine wave 60 3 2 10 Average Output Current, IO -- A 80 C -- VR 5 Transient Thermal Resistance, Rth(j-c) -- °C / W 170 7 100 2 ID01024 Rth(j-c) -- t 7 5 3 2 7 5 3 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s 5 7 10 2 IT12077 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. PS No. A0689-3/3