SCH1331-TL-H

SCH1331 Power MOSFET –12V, 84mΩ, –3A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features  Low On-Resistance  High speed switching  1.8V drive  Low capacitance  Pb-Free, Halogen Free and RoHS compliance  Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS RDS(on) Max 84mΩ@ 4.5V ID Max 12V 126mΩ@ 2.5V 3A 230mΩ@ 1.8V ELECTRICAL CONNECTION P-Channel Typical Applications  Battery Switch  Load Switch  DC/DC Converter  Lens Motor Driver 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 Value Unit 12 V VGSS 10 V Drain Current (DC) ID 3 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 12 A Power Dissipation When mounted on ceramic substrate 2 (900mm  0.8mm) PD 1 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity < 200V*”, so please take care when handling. *Machine Model 4 PACKING TYPE : TL MARKING YG LOTNo. VDSS Gate to Source Voltage LOTNo. Drain to Source Voltage TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm  0.8mm) Symbol RJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 2 Value Unit 125 1 C/W Publication Order Number : SCH1331/D SCH1331 ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Conditions Value min ID=1mA, VGS=0V VDS=12V, VGS=0V VGS=8V, VDS=0V 12 VDS=6V, ID=1mA 0.4 VDS=6V, ID=1.5A 2.7 typ max Unit V 10 A 10 A 1.3 V 4.5 S ID=1.5A, VGS=4.5V ID=0.8A, VGS=2.5V 64 84 m 90 126 m ID=0.3A, VGS=1.8V 135 230 m 405 pF Output Capacitance Coss 145 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) 8.8 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf 50 ns 5.6 nC Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS=6V, f=1MHz See specified Test Circuit VDS=6V, VGS=4.5V, ID=2.5A 0.7 nC 1.6 nC VSD Forward Diode Voltage IS=2.5A, VGS=0V 0.82 1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1.5A RL=4 VIN D VOUT PW=10s D.C.≤1% G SCH1331 P.G 50 S www.onsemi.com 2 SCH1331 www.onsemi.com 3 SCH1331 www.onsemi.com 4 SCH1331 PACKAGE DIMENSIONS unit : mm SOT-563 / SCH6 CASE 463AB ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 1.4 0.4 0.3 0.5 0.5 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YG SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1331-TL-H SCH1331-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1331 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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