SCH1345
Power MOSFET
–20V, 49mΩ, –4.5A, Single P-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
• Low On-Resistance
• 1.5V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
49mΩ@ −4.5V
64mΩ@ −2.5V
−20V
ELECTRICAL CONNECTION
P-Channel
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
1, 2, 5, 6
Value
Unit
Drain to Source Voltage
VDSS
−20
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
−4.5
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−18
A
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
PD
1
W
Junction Temperature
Tj
150
°C
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
3
4
PACKING TYPE : TL
MARKING
YW
LOT No.
LOT No.
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
TL
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
RθJA
© Semiconductor Components Industries, LLC, 2015
November 2015 - Rev. 2
−4.5A
85mΩ@ −1.8V
120mΩ@ −1.5V
Typical Applications
• Load Switch
• LCD Drive Switch
Junction to Ambient
When mounted on ceramic substrate
2
(900mm × 0.8mm)
ID Max
125
1
°C/W
See detailed ordering and shipping
information on page 5 of this data sheet.
Publication Order Number :
SCH1345/D
SCH1345
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Conditions
Value
min
ID=−1mA, VGS=0V
VDS=−20V, VGS=0V
VGS=±8V, VDS=0V
−20
VDS=−10V, ID=−1mA
−0.4
typ
max
Unit
V
−1
μA
±10
μA
−1.3
V
VDS=−10V, ID=−2A
6
RDS(on)1
RDS(on)2
ID=−2A, VGS=−4.5V
42
49
mΩ
ID=−1A, VGS=−2.5V
53
64
mΩ
RDS(on)3
RDS(on)4
ID=−0.5A, VGS=−1.8V
65
85
mΩ
ID=−0.5A, VGS=−1.5V
74
120
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
1220
S
pF
82
pF
Crss
72
pF
Turn-ON Delay Time
td(on)
8.8
ns
Rise Time
tr
35
ns
Turn-OFF Delay Time
td(off)
123
ns
Fall Time
tf
Qg
Total Gate Charge
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VDS=−10V, f=1MHz
See specified Test Circuit
VDS=−10V, VGS=−4.5V, ID=−4.5A
61
ns
11
nC
1.9
nC
1.9
nC
VSD
Forward Diode Voltage
IS=−4.5A, VGS=0V
−0.82
−1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--4.5V
VDD= --10V
VIN
ID= --2A
RL=5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
50Ω
SCH1345
S
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2
SCH1345
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3
SCH1345
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4
SCH1345
PACKAGE DIMENSIONS
unit : mm
SOT-563 / SCH6
CASE 463AB
ISSUE O
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
1.4
0.4
0.3
0.5 0.5
ORDERING INFORMATION
Device
SCH1345-TL-H
Marking
Package
Shipping (Qty / Packing)
YW
SOT-563 / SCH6
(Pb-Free / Halogen Free)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the SCH1345 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
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