SCH1436-TL-H

SCH1436 Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features • Low On-Resistance • 4V drive • Low Capacitance • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS RDS(on) Max 180mΩ@ 10V 30V ID Max 1.8A 330mΩ@ 4V ELECTRICAL CONNECTION N-Channel Typical Applications • Load Switch 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 7.2 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C 3 4 PACKING TYPE : TL LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity