Ordering number : ENA1006B
SCH2825
N-Channel Power MOSFET
30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode
http://onsemi.com
Features
•
•
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
• Ultrahigh-speed switching
• 4V drive
[MOSFET] • Low ON-resistance
•
•
[SBD]
Short reverse recovery time
Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain to Source Voltage
VDSS
VGSS
ID
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
Channel Temperature
Storage Temperature
30
V
±20
V
1.6
A
PW≤10μs, duty cycle≤1%
6.4
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.6
W
Tch
150
°C
Tstg
--55 to +125
°C
30
V
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
VRRM
VRSM
IO
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
30
V
0.5
A
3
A
--55 to +125
°C
--55 to +125
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7028-003
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
SCH2825-TL-E
1.6
6 5 4
0.2
Packing Type : TL
1.5
2
3
0.5
TL
0.25
0.56
1
XA
LOT No.
0.05
Marking
LOT No.
1.6
0.05
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Electrical Connection
6
5
4
1
2
3
SCH6
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002992/62712TKIM/D1207PE TIIM TC-00001031 No. A1006-1/6
SCH2825
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
VGS(off)
| yfs |
Forward Transfer Admittance
Static Drain to Source On-State Resistance
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
1.2
VDS=10V, ID=800mA
0.6
V
1
μA
±10
μA
2.6
1.0
V
S
RDS(on)1
ID=800mA, VGS=10V
135
180
mΩ
RDS(on)2
ID=400mA, VGS=4V
230
330
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
88
pF
19
pF
Crss
11
pF
3.4
ns
Rise Time
td(on)
tr
3.5
ns
Turn-OFF Delay Time
td(off)
10.6
ns
Fall Time
tf
4.0
ns
Total Gate Charge
Qg
2.0
nC
Gate to Source Charge
Qgs
0.33
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=1.6A, VGS=0V
VR
VF
IR=0.5mA
IR
C
VR=15V
Interterminal Capacitance
Reverse Recovery Time
trr
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=1.6A
0.29
nC
0.82
1.2
V
0.42
0.48
V
120
μA
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
13
VDD=15V
VOUT
50Ω
100Ω
10Ω
10mA
100mA
10μs
100mA
D
ns
Duty≤10%
ID=800mA
RL=18.75Ω
PW=10μs
D.C.≤1%
pF
10
trr Test Circuit
(SBD)
10V
0V
VIN
V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Switching Time Test Circuit
(MOSFET)
VIN
30
IF=0.5A
G
--5V
trr
SCH2825
P.G
50Ω
S
Ordering Information
Device
SCH2825-TL-E
Package
Shipping
memo
SCH6
5,000pcs./reel
Pb Free
No. A1006-2/6
SCH2825
ID -- VDS
VDS=10V
4.0
6.0V
1.6
0.6
0.4
C
0.2
VGS=2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0
1.0
Drain to Source Voltage, VDS -- V
IT13107
RDS(on) -- VGS
[MOSFET]
390
300
270
ID=0.4A
0.8A
210
180
150
120
90
0
2
4
6
8
10
12
14
Gate to Source Voltage, VGS -- V
yfs -- ID
3
300
3.0
3.5
4.0
IT13108
[MOSFET]
4A
0.
I D=
,
V
=4
V GS
270
240
210
A
.8
I =0
10V, D
=
V GS
180
150
120
90
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
IT13131
IS -- VSD
[MOSFET]
3
2
140
160
IT13132
[MOSFET]
VGS=0V
1.0
7
5
2
0.1
7
5
75
°C
3
2
3
2
0.1
7
5
3
2
75°C
°C
-25
=a
T
°C
25
3
Source Current, IS -- A
1.0
7
5
0.01
7
5
3
2
0.01
7
0.001
2.5
330
60
--60
16
VDS=10V
2
2.0
360
25°
C
25°C
240
1.5
RDS(on) -- Ta
390
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
330
1.0
Gate to Source Voltage, VGS -- V
Ta=25°C
360
0.5
Ta=
--
0
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
0.6
0.4
0
Forward Transfer Admittance, yfs -- S
0.8
3.0V
0.2
2
3
5 7 0.01
2
3
5 7 0.1
2
3
SW Time -- ID
5
0.001
0.2
5 7 1.0
IT13111
Drain Current, ID -- A
[MOSFET]
Ciss, Coss, Crss -- pF
td(off)
10
7
tf
td(on)
tr
3
0.6
0.8
1.0
1.2
f=1MHz
2
2
5
0.4
Diode Forward Voltage, VSD -- V
IT13112
Ciss, Coss, Crss -- VDS [MOSFET]
3
VDD=15V
VGS=10V
3
Switching Time, SW Time -- ns
1.0
--25
°C
0.8
1.2
25°
3.5V
15.0V
1.0
1.4
Ta=
75°
C
Drain Current, ID -- A
1.2
[MOSFET]
1.8
10.0V
1.4
Drain Current, ID -- A
2.0
8.0V
1.6
ID -- VGS
[MOSFET]
V
1.8
2
Ciss
100
7
5
3
Coss
2
Crss
10
7
1.0
0.1
5
2
3
5
7
1.0
Drain Current, ID -- A
2
3
5
IT13113
0
5
10
15
20
25
Drain to Source Voltage, VDS -- V
30
IT13114
No. A1006-3/6
SCH2825
VGS -- Qg
10
8
7
3
2
Drain Current, ID -- A
6
5
4
1
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Total Gate Charge, Qg -- nC
[MOSFET]
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
IT13134
IF -- VF
[SBD]
7
5
W
he
nm
ou
0.5
nte
do
nc
0.4
era
mi
cs
0.3
ub
str
ate
(90
0m
m2
✕0
0.2
.8m
m)
0.1
1u
3
2
0.1
7
5
Ta=
125
°C
100
°C
75°C
50°C
25°C
0.6
3
2
nit
0.01
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
IT13135
IR -- VR
[SBD]
100000
7
5
3
2
5°
Ta=12
10000
7
5
3
2
C
100°C
75°C
1000
7
5
3
2
50°C
100
7
5
3
2
25°C
10
7
5
3
2
1.0
0
5
10
15
20
25
30
Reverse Voltage, VR -- V
f=1MHz
5
3
2
10
7
5
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
PF(AV) -- IO
0.35
0.6
IT07927
[SBD]
Rectangular wave
(1)
0.30
(2) (4) (3)
θ
360°
0.25
Sine wave
0.20
180°
360°
0.15
0.10
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
0.05
0
0
0.1
0.3
0.2
0.4
0.5
Average Output Current, IO -- A
[SBD]
7
3
0.1
0.1
IT07928
C -- VR
100
0
160
Average Forward Power Dissipation, PF(AV) -- W
20
0.6
IT08187
IFSM -- t
3.5
Surge Forward Current, IFSM(Peak) -- A
0
Reverse Current, IR -- μA
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
1.0
0
Interterminal Capacitance, C -- pF
op
Drain to Source Voltage, VDS -- V
Forward Current, IF -- A
Allowable Power Dissipation, PD -- W
2.0
0μ
s
10
m
s
10
0m
er
ati
s
on
(T
a=
25
°C
Operation in this
)
area is limited by RDS(on).
DC
IT13133
PD -- Ta
0.7
ID=1.6A
0.01
0.1
0
0
10
1m
s
3
2
2
[MOSFET]
IDP=6.4A(PW≤10μs)
1.0
7
5
0.1
7
5
3
ASO
2
10
7
5
9
Gate to Source Voltage, VGS -- V
[MOSFET]
VDS=10V
ID=1.6A
[SBD]
Current waveform 50Hz sine wave
3.0
IS
20ms
t
2.5
2.0
1.5
1.0
0.5
0
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
7
IT07891
7 0.01
2
3
5
7 0.1
2
3
Time, t -- s
5
7 1.0
2
3
ID00338
No. A1006-4/6
SCH2825
Outline Drawing
SCH2825-TL-E
Land Pattern Example
Mass (g) Unit
0.004 mm
* For reference
Unit: mm
1.4
0.4
0.3
0.5 0.5
No. A1006-5/6
SCH2825
Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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PS No. A1006-6/6
