SFM9014TF

SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS(on) = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Lower RDS(ON) : 0.362 Ω (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Value Drain-to-Source Voltage V -60 o ID Units Continuous Drain Current (TA=25 C) -1.8 o Continuous Drain Current (TA=70 C) A -1.1 O1 2 O IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current O1 -1.8 A EAR Repetitive Avalanche Energy 0.28 mJ dv/dt Peak Diode Recovery dv/dt O1 O3 -5.5 V/ns 2.8 W 0.022 W/ C PD TJ , TSTG TL o Total Power Dissipation (TA=25 C) * Linear Derating Factor * Operating Junction and -14 A ±!" V 110 mJ o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. Max. -- 45 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B P-CHANNEL POWER MOSFET SFM9014 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -60 -- -- -- -0.05 -- -2.0 -- -4.0 -- -- -100 V nA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V -- 100 -- -10 -- -- -100 -- -- 0.5 Ω VGS=-10V,ID=-0.9A 4 O S VDS=-30V,ID=-0.9A 4 O -- 1.43 -- Ciss Input Capacitance -- 270 350 Coss Output Capacitance -- 90 135 Crss Reverse Transfer Capacitance -- 25 35 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 19 50 Turn-Off Delay Time -- 21 50 Fall Time -- 16 40 tf V/ C ID=-250µA -- Forward Transconductance td(off) VGS=0V,ID=-250µA o -- gfs tr V Test Condition Qg Total Gate Charge -- 9 11 Qgs Gate-Source Charge -- 1.8 -- Qgd Gate-Drain(“Miller”) Charge -- 4.2 -- µA pF VDS=-60V o VDS=-48V,TC=125 C VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-30V,ID=-6.7A, ns RG=24Ω See Fig 13 4 O 5 O VDS=-48V,VGS=-10V, nC ID=-6.7A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Min. Typ. Max. Units Continuous Source Current -1.8 Test Condition -- -- -- -- -14 -- -- -3.8 V TJ=25 C,IS=-1.8A,VGS=0V A Integral reverse pn-diode ISM Pulsed-Source Current 1 O VSD Diode Forward Voltage O trr Reverse Recovery Time -- 75 -- ns TJ=25 C,IF=-6.7A Qrr Reverse Recovery Charge -- 0.17 -- µC diF/dt=100A/µs 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=40mH, IAS=-1.8A, VDD=-25V, RG=27Ω*, Starting TJ =25oCo O3 ISD