SFM9110TF

SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -1.0 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Value Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ , TSTG TL -1.0 o Continuous Drain Current (TA=70 C) IDM V -100 o ID Units A -0.7 O1 2 O O1 O1 O3 o Total Power Dissipation (TA=25 C) * Linear Derating Factor * Operating Junction and -8.0 A ±30 V 53 mJ -1.0 A 0.25 mJ -6.5 V/ns 2.52 W 0.02 W/ C o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. Max. -- 50 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B P-CHANNEL POWER MOSFET SFM9110 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -100 -- -- -- -0.1 -- -2.0 -- -4.0 -- -- -100 V nA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V -- 100 -- -10 -- -- -100 -- -- 1.2 Ω VGS=-10V,ID=-0.5A 4 O S VDS=-40V,ID=-0.5A 4 O -- 1.3 -- Ciss Input Capacitance -- 260 335 Coss Output Capacitance -- 50 80 Crss Reverse Transfer Capacitance -- 17 25 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 20 50 Turn-Off Delay Time -- 25 60 Fall Time -- 12 35 tf V/ C ID=-250µA -- Forward Transconductance td(off) VGS=0V,ID=-250µA o -- gfs tr V Test Condition Qg Total Gate Charge -- 9 10 Qgs Gate-Source Charge -- 1.5 -- Qgd Gate-Drain(“Miller”) Charge -- 4.3 -- µA pF VDS=-100V o VDS=-80V,TC=125 C VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V,ID=-3.6A, ns RG=24 Ω See Fig 13 4O 5 O VDS=-80V,VGS=-10V, nC ID=-3.6A See Fig 6 & Fig 12 4O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Min. Typ. Max. Units Continuous Source Current Test Condition -- -- -1.0 -- -- -8.0 -- -- -3.8 V TJ=25 C,IS=-1.0A,VGS=0V A Integral reverse pn-diode ISM Pulsed-Source Current 1 O VSD Diode Forward Voltage O trr Reverse Recovery Time -- 100 -- ns TJ=25 C,IF=-3.6A Qrr Reverse Recovery Charge -- 0.35 -- µC diF/dt=100A/µs 4 Notes ; Temperature O1 Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 * =-1.0A, V =-25V, R =27Ω , Starting T =25 C L=80mH, I O AS DD G J O3 ISD