SFP9530

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This literature is subject to all applicable copyright laws and is not for resale in any manner. SFP9530 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -10.5 A n Improved Gate Charge o n 175 C Opereting Temperature TO-220 n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.225 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage o ID Continuous Drain Current (TC=25 C) o VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt O 1 O 1 O O3 2 o PD TJ , TSTG TL -100 V A -7.5 1 O Drain Current-Pulsed Units -10.5 Continuous Drain Current (TC=100 C) IDM Value Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and -42 A ±30 V 368 mJ -10.5 A 6.6 mJ -6.5 V/ns 66 W 0.44 W/ C o - 55 to +175 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 2.27 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units o C/W Rev. C P-CHANNEL POWER MOSFET SFP9530 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -100 -- -- -- -0.1 -- -2.0 -- -4.0 -- -- -100 V nA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V -- 100 -- -10 -- -- -100 -- -- 0.3 Ω VGS=-10V,ID=-5.3A 4 O -- S VDS=-40V,ID=-5.3A 4 O -- 5.5 Ciss Input Capacitance -- 800 1035 Coss Output Capacitance -- 160 240 Crss Reverse Transfer Capacitance -- 60 90 td(on) Turn-On Delay Time -- 13 35 Rise Time -- 22 55 Turn-Off Delay Time -- 45 100 Fall Time -- 25 60 tf V/ C ID=-250µA -- Forward Transconductance td(off) VGS=0V,ID=-250µA o -- gfs tr V Test Condition Qg Total Gate Charge -- 30 38 Qgs Gate-Source Charge -- 5.4 -- Qgd Gate-Drain(“Miller”) Charge -- 12.2 -- µA pF VDS=-100V o VDS=-80V,TC=150 C VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V,ID=-10.5A, ns RG=12 Ω See Fig 13 4O 5 O VDS=-80V,VGS=-10V, nC ID=-10.5A See Fig 6 & Fig 12 4O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Min. Typ. Max. Units Continuous Source Current -10.5 Test Condition -- -- -- -- -42 -- -- -4.0 V TJ=25 C,IS=-10.5A,VGS=0V A Integral reverse pn-diode ISM Pulsed-Source Current 1 O VSD Diode Forward Voltage O trr Reverse Recovery Time -- 120 -- ns TJ=25 C,IF=-10.5A Qrr Reverse Recovery Charge -- 0.53 -- µC diF/dt=100A/µs 4 Notes ; Temperature O1 Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 * =-10.5A, V =-25V, R =27Ω , Starting T =25 C L=5.0mH, I O AS DD G J O3 ISD