Ordering number : ENA1169A
SFT1202
Bipolar Transistor
http://onsemi.com
150V, 2A, Low VCE(sat), NPN Single TP/TP-FA
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
IC
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
ICP
IB
Base Current
Unit
180
V
180
V
150
V
7
V
2
A
3
400
A
mA
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
0.6
1
2
2.3
1
0.5
3
2.3
2.5
0.8
1.2
7.5
0.8
1.6
0.85
2
3
0 to 0.2
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1.2
5.5
0.85
0.7
SFT1202-TL-E
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
SFT1202-E
0.5
7.0
2.3
6.5
5.0
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
T1202
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/73008EA TIIM TC-00001478 No.A1169-1/9
SFT1202
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
1
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
W
15
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
Ratings
min
typ
Unit
max
ICBO
IEBO
VCB=80V, IE=0A
1
μA
VEB=4V, IC=0A
1
μA
VCE=5V, IC=100mA
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
VCE=10V, IC=300mA
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
Emitter-to-Base Breakdown Voltage
V(BR)CES
V(BR)CEO
V(BR)EBO
Turn-ON Time
ton
Storage Time
tstg
tf
Collector-to-Emitter Breakdown Voltage
Fall Time
200
560
140
VCB=10V, f=1MHz
IC=1A, IB=100mA
MHz
12
IC=0.5A, IB=50mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
165
mV
65
100
mV
0.85
1.2
V
180
V
180
V
150
V
7
V
50
See specified Test Circuit.
pF
110
ns
1460
ns
70
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=75V
IC=10IB1= --10IB2=0.5A
Ordering Information
Device
SFT1202-E
SFT1202-TL-E
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free
No.A1169-2/9
SFT1202
IC -- VCE
16
200
mA
1
mA
Collector Current, IC -- A
60mA
40mA
1.0
20mA
10mA
5mA
0.5
IB=0mA
0
0
0.1
0.2
0.3
0.4
1
200
1.0
10mA
5mA
2mA
1mA
0.5
IB=0mA
DC Current Gain, hFE
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
VCE=5V
3
2
Ta=75°C
25°C
--25°C
100
7
5
2
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
10
0.01
1.2
2
3
5
7 0.1
2
3
5
7 1.0
fT -- IC
5
Cob -- VCB
7
f=1MHz
5
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
3
IT13545
VCE=10V
100
7
5
3
2
10
0.01
2
3
5
7
2
0.1
3
5
Collector Current, IC -- A
3
2
10
7
5
3
0.1
7
1.0
IT13546
2
3
5
7 1.0
2
3
5
7 10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
0.1
7
5
°C
25
C
Ta=75°
--25°C
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
5 7 100
IT13547
IC / IB=10
IC / IB=10
2
3
VBE(sat) -- IC
2
3
3
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
Collector Current, IC -- A
IT13544
2
0.01
0.01
5
IT13543
3
0
3
4
7
1.0
0.6
3
hFE -- IC
1000
1.5
0.4
2
Collector-to-Emitter Voltage, VCE -- V
5
0.2
1
IT13542
2.0
0
20mA
mA
0
VCE=5V
0.5
A
20m
0
IC -- VBE
2.5
60mA
40mA
1.5
0.5
Collector-to-Emitter Voltage, VCE -- V
80mA
100mA
100mA 80mA
250
1.5
IC -- VCE
2.0
20mA
500
Collector Current, IC -- A
0m
mA
A
2.0
3
IT13548
1.0
Ta= --25°C
7
5
25°C
75°C
3
2
0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
IT13549
No.A1169-3/9
SFT1202
ASO
3
10
2
0m
s
3
μs
μs 500
100
s
0m
n
s1
tio
era
0.1
7
5
IC=2A
1.0
7
5
op
2
1m
n
tio
3
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