SFT1341-TL-E

Ordering number : ENA1444B SFT1341 Power MOSFET http://onsemi.com –40V, 112mΩ, –10A, Single P-Channel Features Electrical Connection • Low On-Resistance • Low Gate Charge • ESD Diode-Protected Gate P-Channel • High Speed Switching • Low Gate Drive Voltage • Pb-free and RoHS Compliance 2, 4 1 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Drain to Source Voltage VDSS –40 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID –10 A IDP –40 A 1.0 W Drain Current PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C PD Junction Temperature Tj Storage Temperature Tstg 3 Unit 15 W 150 °C −55 to +150 °C Packing Type:TL Marking T1341 LOT No. TL 4 4 Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient * 1 Symbol Value 1 Unit RθJC 8.33 RθJA 125 °C/W 1 2 3 IPAK(TP) 2 3 DPAK(TP-FA) Note : *1 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003148/60612 TKIM/40809PA MSIM TC-00001932 No.A1444-1/6 SFT1341 Electrical Characteristics at Ta = 25°C Value Parameter Symbol Conditions Unit min Drain to Source Breakdown Voltage V(BR)DSS ID= –1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS= –40V, VGS=0V Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V typ max –40 V μA ±10 μA –1.4 V 112 mΩ Gate Threshold Voltage VGS(th) VDS= –10V, ID= –1mA Forward Transconductance gFS VDS= –10V, ID= –5A RDS(on)1 ID= –5A, VGS= –4.5V RDS(on)2 ID= –5A, VGS= –2.5V 110 154 mΩ RDS(on)3 ID= –2.5A, VGS= –1.8V 140 210 mΩ Static Drain to Source On-State Resistance –0.4 –1 4.6 7.7 86 S Input Capacitance Ciss Output Capacitance Coss 65 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) 9.0 ns Rise Time tr 50 ns ns 650 VDS= –20V, f=1MHz pF See specified Test Circuit. Turn-OFF Delay Time td(off) 81 Fall Time tf 80 ns Total Gate Charge Qg 8.0 nC Gate to Source Charge Qgs 1.4 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS= –20V, VGS= –4.5V, ID= –10A 2.5 IS= –10A, VGS=0V –1.0 nC –1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --20V VIN ID= --5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω SFT1341 S No.A1444-2/6 SFT1341 No.A1444-3/6 SFT1341 No.A1444-4/6 SFT1341 Package Dimensions SFT1341-TL-E/SFT1341-TL-W DPAK/TP-FA unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.A1444-5/6 SFT1341 Package Dimensions SFT1341-E/ SFT1341-W IPAK/TP Unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Ordering & Package Information Device SFT1341-E SFT1341-W SFT1341-TL-E SFT1341-TL-W Package IPAK(TP) SC-64 TO-251 DPAK(TP-FA) SC-63 TO-252 Shipping Note Pb-Free 500pcs. / bag Pb-Free and Halogen Free Pb-Free 700pcs. / reel Pb-Free and Halogen Free Note on usage : Since the SFT1341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A1444-6/6