SFT1342-TL-E

Ordering number : ENA1559B SFT1342 Power MOSFET http://onsemi.com –60V, 62mΩ, –12A, Single P-Channel Features Electrical Connection • Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance P-Channel • High Speed Switching • ESD Diode-Protected Gate 2, 4 1 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Drain to Source Voltage VDSS –60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID –12 A IDP –48 A 1.0 W Drain Current PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C PD Junction Temperature Tj Storage Temperature Tstg 3 Unit 15 W 150 °C −55 to +150 °C Packing Type:TL Marking T1342 LOT No. TL 4 4 Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient * 1 Symbol Value 1 Unit RθJC 8.33 RθJA 125 °C/W 1 2 3 IPAK(TP) 2 3 DPAK(TP-FA) Note : *1 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003149/60612 TKIM/O1409PA TKIM TC-00002077 No.A1559-1/6 SFT1342 Electrical Characteristics at Ta = 25°C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID= –1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS= –60V, VGS=0V –60 –1 μA V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA –2.6 V Gate Threshold Voltage VGS(th) VDS= –10V, ID= –1mA Forward Transconductance gFS VDS= –10V, ID= –6A 11 RDS(on)1 ID= –6A, VGS= –10V 47 62 mΩ RDS(on)2 ID= –6A, VGS= –4.5V 62 87 mΩ RDS(on)3 ID= –6A, VGS= –4V 68 96 mΩ Static Drain to Source On-State Resistance –1.2 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 10 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 135 ns Fall Time tf 75 ns Total Gate Charge Qg 26 nC Gate to Source Charge Qgs 3.5 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS= –20V, f=1MHz 1150 pF 115 pF 95 pF See specified Test Circuit. VDS= –30V, VGS= –10V, ID= –12A 5 IS= –12A, VGS=0V –0.95 nC –1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --6A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω SFT1342 S No.A1559-2/6 SFT1342 No.A1559-3/6 SFT1342 No.A1559-4/6 SFT1342 Package Dimensions SFT1342-TL-E/ SFT1342-TL-W DPAK/TP-FA unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.A1559-5/6 SFT1342 Package Dimensions SFT1342-E/ SFT1342-W IPAK/TP Unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Ordering & Package Information Device SFT1342-E SFT1342-W SFT1342-TL-E SFT1342-TL-W Package Shipping IPAK(TP) SC-64,TO-251 500pcs. / bag DPAK(TP-FA) SC-63,TO-252 700pcs. / reel Note Pb-Free Pb-Free and Halogen Free Pb-Free Pb-Free and Halogen Free Note on usage : Since the SFT1342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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