SFT1345-TL-H

SFT1345 Power MOSFET –100V, 275mΩ, –11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features  Low On-Resistance  4V drive  100% Avalanche Tested  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 275mΩ@ 10V ID Max 100V 315mΩ@ 4.5V 11A 330mΩ@ 4V ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  Load Switch 2,4 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ID 20 V 11 A IDP 44 A 1.0 W 35 W 150 C Drain Current (DC) Drain Current PW  10s, duty cycle  1% Power Dissipation Tc=25C Junction Temperature PD Tj 3 PACKING TYPE : TL LOT No. TL Parameter Symbol Value Unit RJC 3.57 RJA 125 © Semiconductor Components Industries, LLC, 2016 February 2016 - Rev. 1 4 4 1 THERMAL RESISTANCE RATINGS Junction to Ambient (Note 2) Note 2 : Insertion mounted MARKING T1345 Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Case Steady State 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 1 2 3 IPAK(TP) 2 3 DPAK(TP-FA) C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 1 Publication Order Number : SFT1345/D SFT1345 ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V 100 VDS=10V, ID=1mA 1.2 typ max Unit V 1 A 10 A 2.6 V VDS=10V, ID=5.5A 8.5 RDS(on)1 RDS(on)2 ID=5.5A, VGS=10V 210 275 m ID=3A, VGS=4.5V 225 315 m RDS(on)3 Ciss ID=3A, VGS=4V 235 330 m Output Capacitance Coss VDS=20V, f=1MHz 72 pF Reverse Transfer Capacitance Crss 43 pF Turn-ON Delay Time td(on) 9.5 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 1020 See specified Test Circuit VDS=50V, VGS=10V, ID=11A S pF 105 ns 55 ns 21 nC 3.6 nC 4.5 nC VSD Forward Diode Voltage IS=11A, VGS=0V 0.93 1.5 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --50V VIN ID= --5.5A RL=9.1 VIN D VOUT PW=10s D.C.≤1% G SFT1345 P.G 50 S www.onsemi.com 2 SFT1345 www.onsemi.com 3 SFT1345 www.onsemi.com 4 SFT1345 PACKAGE DIMENSIONS unit : mm DPAK / TP-FA CASE 369AH ISSUE O to 1 : Gate 2 : Drain 3 : Source 4 : Drain Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 2.3 www.onsemi.com 5 SFT1345 PACKAGE DIMENSIONS unit : mm IPAK / TP CASE 369AJ ISSUE O 1 : Gate 2 : Drain 3 : Source 4 : Drain ORDERING INFORMATION Device Package Shipping (Qty / Packing) IPAK / TP 500 / Bag (Pb-Free / Halogen Free) DPAK / TP-FA 700 / Tape & Reel SFT1345-TL-H T1345 (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF SFT1345-H Marking T1345 Note on usage : Since the SFT1345 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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