SFT1350-H

Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET http://onsemi.com –40V, –19A, 59mΩ, Single TP/TP-FA Features • • ON-resistance RDS(on)1=45mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=590pF(typ.) Protection diode in • 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) PW≤10μs, duty cycle≤1% Unit --40 V ±20 V --19 A --76 A 1.0 W Allowable Power Dissipation PD 23 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 2.3 0.5 0.6 1 2 2.3 7.5 1 0.5 2 3 0 to 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.5 0.8 0.8 1.6 0.85 1.2 1.2 2.3 2.3 TP 2.3 SFT1350-TL-H 1.2 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 2.3 6.5 5.0 SFT1350-H 0.5 7.0 6.5 5.0 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL 2, 4 Electrical Connection T1350 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/D1510PA TKIM TC-00002500 No. A1874-1/9 SFT1350 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Conditions Ratings min --40 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--40V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--9.5A --1.7 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--9.5A, VGS=--10V ID=--5A, VGS=--4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance typ Unit max V --1 μA ±10 μA --2.6 8.7 V S 45 59 mΩ 73 105 mΩ 590 pF 85 pF Crss 61 pF Turn-ON Delay Time td(on) 8 ns Rise Time tr 40 ns Turn-OFF Delay Time td(off) 52 ns Fall Time tf 44 ns Total Gate Charge Qg 12 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--19A IS=--19A, VGS=0V 3.6 nC 2.0 nC --1.03 --1.2 V Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --9.5A RL=2.1Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1350 P.G 50Ω S Ordering Information Device SFT1350-H SFT1350-TL-H Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free and Halogen Free No. A1874-2/9 SFT1350 --4.0V --10 --8 --6 VGS= --3.5V --4 C Tc= 25° --20 --15 --10 Tc= 75° --25 C °C Drain Current, ID -- A --12 --5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V 0 --2.0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V IT16056 RDS(on) -- VGS 300 --1.8 25 °C --2 0 --25 °C 75° C V .0 --25 --1 6 --14 VDS= --10V --4.5V .0V --16 ID -- VGS --30 Tc=25°C --6 .0V --10 --18 Drain Current, ID -- A --8 .0V ID -- VDS --20 RDS(on) -- Tc 160 --7 IT16108 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --9.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 25°C Tc= 3 2 °C --25 C 75° 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 td (off) tf 3 2 tr 10 7 5 td(on) 3 2 1.0 --0.1 = VGS 40 .5A = --9 0V, I D --10. 20 --40 --20 0 20 40 60 80 100 120 140 160 IT16068 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 7 --1.2 IT16072 f=1MHz Ciss 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 7 --100 IT16109 VDD= --20V VGS= --10V 100 7 5 60 --0.01 7 5 3 2 --0.001 SW Time -- ID 1000 7 5 = VGS --100 7 5 3 2 3 10 7 5 80 = -, ID V 5 . --4 Case Temperature, Tc -- °C VDS= --10V 2 5.0A IT16071 | yfs | -- ID 100 7 5 100 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 120 --25°C ID= --5A 200 140 25°C 250 Tc= 75°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C 3 2 Coss 100 7 Crss 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT16073 10 0 --5 --10 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V --40 IT16074 No. A1874-3/9 SFT1350 VGS -- Qg --8 --6 --4 --2 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC PD -- Ta 12 0.6 0.4 0.2 20 40 60 80 100 ID= --19A DC --10 7 5 3 2 --1.0 7 5 3 2 120 Ambient Temperature, Ta -- °C 140 160 IT16066 10 ms op 10μ s 0μ s 10 1m s era tio n Operation in this area is limited by RDS(on). 10 0m s Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 30 0.8 0 IDP= --76A (PW≤10μs) IT116064 1.0 0 --100 7 5 3 2 --0.1 --0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 ASO --1000 7 5 3 2 VDS= --20V ID= --19A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 3 5 7 --100 IT16065 25 23 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16067 No. A1874-4/9 SFT1350 Taping Specification SFT1350-TL-H No. A1874-5/9 SFT1350 Outline Drawing SFT1350-TL-H Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1874-6/9 SFT1350 Bag Packing Specification SFT1350-H No. A1874-7/9 SFT1350 Outline Drawing SFT1350-H Mass (g) Unit 0.315 mm * For reference No. A1874-8/9 SFT1350 Note on usage : Since the SFT1350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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