SFT1450-TL-H

Ordering number : ENA1743A SFT1450 N-Channel Power MOSFET http://onsemi.com 40V, 21A, 28mΩ, Single TP/TP-FA Features • • ON-resistance RDS(on)1=21mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=715pF(typ.) Protection diode in 4.5V drive • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 40 V ±20 V 21 A PW≤10μs, duty cycle≤1% 84 A 1 W Allowable Power Dissipation PD 23 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 0.5 0.6 1 2 2.3 7.5 1 2 3 0 to 0.2 0.6 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.5 0.8 0.8 1.6 0.85 1.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA TP 2.3 SFT1450-TL-H 2.3 6.5 5.0 1.2 SFT1450-H 0.5 7.0 2.3 6.5 5.0 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL 2, 4 Electrical Connection T1450 LOT No. 1 TL 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/60910PA TKIM TC-00002332 No. A1743-1/9 SFT1450 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min typ Unit max 40 ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.7 1 μA ±10 μA 2.6 V VDS=10V, ID=10.5A ID=10.5A, VGS=10V 5.4 S 21 28 mΩ ID=5.5A, VGS=4.5V 40 56 mΩ 715 pF 85 pF Crss 65 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 42 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=21A 42 ns 38 ns 14.4 nC 3.8 nC 3.1 IS=21A, VGS=0V 0.96 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=10.5A RL=1.9Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1450 P.G 50Ω S Ordering Information Device SFT1450-H SFT1450-TL-H Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free and Halogen Free No. A1743-2/9 6.0 V 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 70 ID=10.5A 5.5A 50 40 30 20 10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 °C --25 C 75° 1.0 5 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 Ciss, Coss, Crss -- pF 3 tf 2 td(on) tr 7 A 40 A =10.5 V, I D 0 . 0 1 = VGS 30 20 10 --40 --20 0 20 40 60 80 100 120 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 3 5 7 10 Drain Current, ID -- A 2 3 5 IT15557 Ciss 5 3 2 Coss 100 7 3 2 1.4 IT15556 f=1MHz 7 3 7 1.0 160 IT15554 VGS=0V Single pulse 1.0 7 5 3 2 5 5 140 IS -- VSD 10 7 5 3 2 5 3 6.0 =4.5 VGS 1000 5 5.5 IT15552 =5.5 , ID 50 3 td(off) 2 5.0 2 7 2 0.1 4.5 Diode Forward Voltage, VSD -- V VDD=20V VGS=10V 10 4.0 60 IT15555 SW Time -- ID 2 3.5 70 0.01 7 5 3 2 0.001 0.2 7 3 0.1 3.0 Case Temperature, Tc -- °C Source Current, IS -- A C 25° 2.5 Single pulse 5 3 2 7 Tc= 2.0 RDS(on) -- Tc 0 --60 16 10 2 1.5 Gate-to-Source Voltage, VGS -- V VDS=10V Single pulse 3 1.0 IT15553 | yfs | -- ID 5 0.5 80 Tc=25°C Single pulse 60 0 IT15551 RDS(on) -- VGS 80 0 2.0 --25° C 0.2 Tc= 75° C --2 5°C 10 Tc= 75° C 25°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 15 5 2 Forward Transfer Admittance, | yfs | -- S 20 VGS=3.5V Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns Drain Current, ID -- A 25 4.0V 90 100 VDS=10V Single pulse Tc=25°C Single pulse V 4.5 Drain-to-Source Voltage, VDS -- V 0 ID -- VGS 30 Tc= --25 °C 75° C 25° C ID -- VDS 10.0 V 8.0 V 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 16.0V Drain Current, ID -- A SFT1450 2 Crss 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 40 IT15558 No. A1743-3/9 SFT1450 VGS -- Qg 10 8 100 7 5 7 3 2 Drain Current, ID -- A 6 5 4 1 3 2 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC PD -- Ta 16 0.6 0.4 0.2 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15549 ms op tio n Operation in this area is limited by RDS(on). 10 0m s Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 30 0.8 0μ s 10 era IT15559 1.0 0 DC 0.1 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 14 ID=21A 3 2 2 10 μs 10 10 7 5 1.0 7 5 3 IDP=84A(PW≤10μs) s 1m Gate-to-Source Voltage, VGS -- V 9 ASO 2 VDS=20V ID=21A 3 5 7 IT15560 25 23 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15550 No. A1743-4/9 SFT1450 Taping Specification SFT1450-TL-H No. A1743-5/9 SFT1450 Outline Drawing SFT1450-TL-H Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1743-6/9 SFT1450 Bag Packing Specification SFT1450-H No. A1743-7/9 SFT1450 Outline Drawing SFT1450-H Mass (g) Unit 0.315 mm * For reference No. A1743-8/9 SFT1450 Note on usage : Since the SFT1450 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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