SFT1452-W

Ordering number : EN9051B SFT1452 N-Channel Power MOSFET http://onsemi.com 250V, 3A, 2.4Ω, Single DPAK/IPAK Features • ON-resistance RDS(on)=1.8W(typ.) • Halogen free compliance Input Capacitance Ciss=210pF(typ.) • ESD Diode-Protected Gate • • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 250 Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 3 A Drain Current (Pulse) IDP Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg PW≤10μs, duty cycle≤1% Tc=25°C V 12 A 1 W 26 W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Value RθJC 4.81 RθJA 125 Unit °C/W Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 0.5 1.5 5.5 0.5 1 2 2.3 3 2.3 7.5 0.8 1.6 0.6 1 2 2.5 1.2 0.8 0.85 0.85 0.7 3 0 to 0.2 0.6 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain IPAK(TP) 1.2 2.3 SFT1452-TL-H SFT1452-TL-W 1.2 4 7.0 5.5 4 2.3 6.5 5.0 1.5 0.5 7.0 SFT1452-H SFT1452-W 2.3 6.5 5.0 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain DPAK(TP-FA) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 June, 2014 60414HK TC-00003127/71112TKIM/41112TKIM PA No.9051-1/6 SFT1452 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Gate Threshold Voltage Forward Transconductance VGS(th) gFS VDS=10V, ID=1.5A Static Drain-to-Source On-State Resistance RDS(on) ID=1.5A, VGS=10V Input Capacitance Ciss min ID=1mA, VGS=0V VDS=250V, VGS=0V VGS=±24V, VDS=0V 250 VDS=10V, ID=1mA 2.5 typ Unit max V 1 mA ±10 mA 4.5 1.7 1.8 V S 2.4 W 210 pF Output Capacitance Coss 20 pF Reverse Transfer Capacitance Crss 7 pF Turn-ON Delay Time td(on) 8 ns Rise Time tr 9 ns Turn-OFF Delay Time td(off) 13 ns Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=125V, VGS=10V, ID=3A 14 ns 4.2 nC 1.4 nC 1.0 IS=3A, VGS=0V 0.95 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V Electrical Connection VDD=125V VIN 2, 4 ID=1.5A RL=81.3Ω VIN D PW=10μs D.C.≤1% VOUT 1 G 3 SFT1452 P.G 50Ω S Ordering & Package Information Device Package SFT1452-H IPAK(TP) SFT1452-W SC-64, TO-251 SFT1452-TL-H DAPK(TP-FA) SFT1452-TL-W SC-63, TO-252 Marking Packing Type:TL Shipping memo 500pcs./bag Pb-Free and Halogen Free 700pcs./reel T1452 LOT No. TL No.9051-2/6 SFT1452 ID -- VDS 2.0 1.5 5V 1.0 2 4 6 10 12 14 16 18 °C --25 Ta= 25°C 75°C 3 2 1 RDS(on) -- VGS HD6835 Single pulse Ta=25°C 3 ID=1.5A 1 0 5 10 15 20 25 Gate-to-Source Voltage, VGS -- V gFS -- ID 10 5 °C -25 = 7 Ta 5 °C 75 3 5 6 7 8 100 120 9 10 140 160 HD6836 RDS(on) -- Ta 4 0V 3 1 S= , VG .5A =1 ID 2 1 --40 --20 0 20 40 60 80 IS -- VSD Single pulse VGS=0V 3 2 HD16838 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 5 7 10 HD16839 Drain Current, ID -- A SW Time -- ID 1000 7 5 2 Ciss, Coss, Crss -- pF 3 2 3 tf td (off) 2 td(on) 10 7 5 tr 3 0.2 0.4 0.6 0.8 1.0 1.2 HD16840 Ciss, Coss, Crss -- VDS 1000 7 5 VDD=125V VGS=10V 100 7 5 0 Forward Diode Voltage, VSD -- V 3 f=1MHz Ciss 100 7 5 3 2 Coss 10 7 5 Crss 3 2 1.0 0.1 4 Single pulse 10 7 5 2 0.1 0.01 3 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C Source Current, IS -- A °C 25 1.0 2 HD16837 3 2 1 0 --60 30 Single pulse VDS=10V 7 0 5 4 2 0 20 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 Drain-to-Source Voltage, VDS -- V 5 Forward Transconductance, gFS -- S Single pulse VDS=10V Ta=7 5°C 25°C --25°C 0 0 0 ID -- VGS(th) VGS=4.5V 0.5 Switching Time, SW Time -- ns Drain Current, ID -- A 6V 8V Drain Current, ID -- A 2.5 4 Single pulse 10V 3.0 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT16841 1.0 0 10 20 30 40 50 60 70 80 Drain-to-Source Voltage, VDS -- V 90 100 IT16842 No.9051-3/6 SFT1452 VGS -- Qg 10 8 10 7 5 7 3 2 5 3 2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 4.0 0.01 1.0 4.5 0.2 60 80 5 7 10 100 120 Ambient Temperature, Ta -- °C 140 2 3 5 7 100 PD -- Tc 2 3 HD16844 26 25 Power Dissipation, PD -- W 0.4 40 3 30 0.6 20 2 Drain-to-Source Voltage, VDS -- V 0.8 0 Tc=25°C Single pulse IT16843 1.0 0 n tio 3 2 era op 1 Operation in this area is limited by RDS(on). DC 2 0 Power Dissipation, PD -- W 1.0 7 5 0.1 7 5 3 0μ s ID=3A 10 μs s 4 10 s 1m s m 10 6 IDP=12A(PW≤10μs) 0m 10 Drain Current, ID -- A 9 Gate-to-Source Voltage, VGS -- V SOA VDS=10V ID=3A 20 15 10 5 0 160 HD16845 0 20 40 60 80 100 120 1 2 140 Case Temperature, Tc -- °C 160 HD16846 RθJC -- Pulse Time 10 Thermal Resistance, RθJC -- ºC/W 7 5 3 Duty Cycle=0.5 2 1.0 0.2 7 0.1 5 0.05 0.02 3 2 0.01 0.00001 le ing se Pul S 1 0.0 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 Pulse Time, PT -- s 3 5 7 0.1 2 3 5 7 3 5 7 10 HD140512 No.9051-4/6 SFT1452 Outline Drawing SFT1452-TL-H, SFT1452-TL-W Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.9051-5/6 SFT1452 Outline Drawing SFT1452-H, SFT1452-W Mass (g) Unit 0.315 mm * For reference Note on usage : Since the SFT1452 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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