SGH20N60RUFDTU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3PN E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH20N60RUFD 600 ± 20 32 20 60 25 220 10 195 75 -55 to +150 -55 to +150 Units V V A A A A A us W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.64 0.83 40 Units °C/W °C/W °C/W SGH20N60RUFD Rev. B1 SGH20N60RUFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 32A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 1323 254 47 ---- pF pF pF --------------- 30 49 48 152 524 473 997 30 51 52 311 568 1031 1599 --70 200 --1400 --75 400 --2240 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation -- us 55 10 25 14 80 15 40 -- nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- TC = 25°C -- 50 95 TC = 100°C -- 105 -- TC = 25°C -- 4.5 10 TC = 100°C -- 8.5 -- TC = 25°C -- 112 375 TC = 100°C -- 420 -- Measured 5mm from PKG C Parameter -- ----- VCE = 300 V, IC = 20A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC = = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 25A TC = 100°C IF= 25A, di/dt = 200 A/us V ns A nC SGH20N60RUFD Rev. B1 SGH20N60RUFD Electrical Characteristics of the IGBT T 60 20V Common Emitter TC = 25℃ 15V 50 Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ 50 12V 40 30 VGE = 10V 20 10 40 30 20 10 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 2. Typical Saturation Voltage Characteristics 28 5 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 24 4 40A Load Current [A] Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics 30A 3 20A 2 IC = 10A 20 16 12 8 1 Duty cycle : 50% TC = 100℃ Power Dissipation = 32W 4 0 0 -50 0 50 100 150 0.1 1 10 Case Temperature, T C [℃] 100 1000 Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] SGH20N60RUFD 60 16 12 8 40A 4 20A IC = 10A 0 16 12 8 40A 20A 4 IC = 10A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGH20N60RUFD Rev. B1 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 2000 Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] Capacitance [pF] Cies 1600 Coes 1200 800 SGH20N60RUFD 2400 Ton Tr 100 Cres 400 0 10 1 10 1 10 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 25℃ ━━ T C = 125℃ ------ Eoff Switching Loss [uJ] Switching Time [ns] 1000 Toff Tf Toff 1000 Eon Eoff Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 25℃ ━━ T C = 125℃ ------ Tf 100 100 1 10 100 1 10 Gate Resistance, R G [Ω ] 100 Gate Resistance, R G [ Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Ton Switching Time [ns] Switching Time [ns] Common Emitter V GE = ± 15V, RG = 10Ω TC = 25℃ ━━ TC = 125℃ -----100 Tr Toff Tf Toff Tf 100 Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ━━ TC = 125℃ ------ 10 10 15 20 25 30 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 35 40 10 15 20 25 30 35 40 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH20N60RUFD Rev. B1 SGH20N60RUFD Switching Loss [uJ] Eoff 1000 Eoff Eon Gate - Emitter Voltage, VGE [ V ] 15 Common Emitter VGE = ± 15V, RG = 10Ω T C = 25℃ ━━ T C = 125℃ ------ Common Emitter RL = 15 Ω TC = 25℃ 12 VCC = 100 V 200 V 9 6 3 0 100 10 15 20 25 30 35 40 0 10 Collector Current, IC [A] 20 30 40 50 60 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current 100 300 V Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 50㎲ 100㎲ 1㎳ Collector Current, IC [A] Collector Current, I C [A] IC MAX. (Continuous) 10 DC Operation 1 0.1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 Safe Operating Area V GE = 20V, TC = 100℃ 1 10 100 1 1000 1 10 Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Thermal Response, Zthjc [℃/W] 100 1000 Collector-Emitter Voltage, V CE [V] Fig 16. Turn-Off SOA Characteristics 1 0.5 0.2 0.1 0.1 0.05 0.02 Pdm 0.01 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 Reverse Recovery Current, I rr [A] Forward Current, IF [A] 100 10 1 0 1 2 VR = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ 10 1 100 3 1000 di/dt [A/us] Forward Voltage Drop, V FM [V] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1000 120 800 V R = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] SGH20N60RUFD 100 TC = 25℃ ━━ TC = 100℃ ------ 600 400 200 0 VR = 200V IF = 25A TC = 25℃ ━━ TC = 100℃ ------ 100 80 60 40 20 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGH20N60RUFD Rev. B1 SGH20N60RUFD Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. 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