SGH30N60RUFDTU

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3PN E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC =100°C @ TC = 25°C @ TC = 100°C SGH30N60RUFD 600 ± 20 48 30 90 25 220 10 235 90 -55 to +150 -55 to +150 Units V V A A A A A us W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.53 0.83 40 Units °C/W °C/W °C/W SGH30N60RUFD Rev. B1 SGH30N60RUFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 30mA, VCE = VGE IC = 30A, VGE = 15V IC = 48A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 1970 310 74 ---- pF pF pF --------------- 30 65 54 138 919 814 1733 34 67 60 281 921 1556 2477 --80 200 --2430 --90 400 --3470 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation -- us 85 17 39 14 120 25 55 -- nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- TC = 25°C -- 50 95 TC = 100°C -- 105 -- TC = 25°C -- 4.5 10 TC = 100°C -- 8.5 -- TC = 25°C -- 112 375 TC = 100°C -- 420 -- Measured 5mm from PKG C Parameter -- ----- VCE = 300 V, IC = 30A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC = = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 25A TC = 100°C IF= 25A, di/dt = 200 A/us V ns A nC SGH30N60RUFD Rev. B1 SGH30N60RUFD Electrical Characteristics of the IGBT T 20V 15V 70 Collector Current, IC [A] Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ 80 Collector Current, IC [A] Common Emitter TC = 25℃ 80 60 12V 50 40 30 VGE = 10V 70 60 50 40 30 20 20 10 10 0 0 0 2 4 6 1 8 Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 40 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 35 60A 4 30 45A 3 30A 2 IC = 15A Load Current [A] Collector - Emitter Voltage, V CE [V] SGH30N60RUFD 90 90 25 20 15 10 1 Duty cycle : 50% TC = 100℃ Power Dissipation = 45W 5 0 0 -50 0 50 100 0.1 150 1 10 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 1000 Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25℃ Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 100 Frequency [KHz] Case Temperature, T C [℃] 16 12 8 4 30A 60A 16 12 8 60A 4 30A IC = 15A IC = 15A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE SGH30N60RUFD Rev. B1 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 3000 Common Emitter VCC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Cies 2500 Switching Time [ns] Capacitance [pF] SGH30N60RUFD 1000 3500 2000 Coes 1500 1000 Ton Tr 100 Cres 500 10 0 1 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 10000 Common Emitter V CC = 300V, V GE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Toff Toff Tf Eon Eoff 1000 Eoff Tf 100 100 1 10 1 100 10 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Common Emitter V GE = ± 15V, RG = 7Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] Common Emitter V GE = ± 15V, RG = 7 Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] 100 Gate Resistance, R G [ Ω ] Ton Tr 100 Toff Tf Toff 100 Tf 10 15 30 45 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 60 15 30 45 60 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH30N60RUFD Rev. B1 15 Gate - Emitter Voltage, VGE [ V ] Common Emitter VGE = ± 15V, RG = 7 Ω TC = 25℃ ━━ TC = 125℃ ------ Switching Loss [uJ] SGH30N60RUFD 10000 Eoff Eon Eoff 1000 100 Common Emitter RL = 10 Ω TC = 25℃ 12 300 V V CC = 100 V 200 V 9 6 3 0 15 30 45 60 0 20 Collector Current, IC [A] 40 60 80 100 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 200 100 IC MAX. (Pulsed) 100 50us 100us Collector Current, IC [A] Collector Current, IC [A] IC MAX. (Continuous) 1㎳ 10 DC Operation 1 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature Safe Operating Area VGE = 20V, T C = 100℃ 0.1 0.3 10 1 10 100 1 1000 1 10 Fig 15. SOA Characteristics Thermal Response, Zthjc [℃/W] 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 16. Turn-Off SOA Characteristics 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pdm 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 -3 10 10 -2 10 -1 0 10 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1 SGH30N60RUFD 100 T C = 25℃ ━━ T C = 100℃ ------ Reverse Recovery Current, Irr [A] Forward Current, IF [A] 100 10 1 2 10 1 100 1 0 VR = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ 3 Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 120 1000 V R = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ 800 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] 1000 di/dt [A/us] Forward Voltage Drop, VFM [V] 600 400 200 0 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation V R = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ 100 80 60 40 20 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGH30N60RUFD Rev. B1 SGH30N60RUFD Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. 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