SGH40N60UFDTU

SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH40N60UFD 600 ± 20 40 20 160 15 160 160 64 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.77 1.7 40 Units °C/W °C/W °C/W SGH40N60UFD Rev. A1 SGH40N60UFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 1430 170 50 ---- pF pF pF ------------------- 15 30 65 50 160 200 360 30 37 110 144 310 430 740 97 20 25 14 --130 150 --600 --200 250 --1200 150 30 40 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 15A TC = 100°C IF = 15A, di/dt = 200A/us TC = 25°C -- 42 60 TC = 100°C -- 74 -- TC = 25°C -- 4.5 6.0 TC = 100°C -- 6.5 -- TC = 25°C -- 80 180 TC = 100°C -- 220 -- V ns A nC SGH40N60UFD Rev. A1 SGH40N60UFD Electrical Characteristics of the IGBT T 80 Common Emitter T C = 25℃ Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 15V 20V 70 Collector Current, I C [A] Collector Current, I C [A] SGH40N60UFD 160 120 12V 80 V GE = 10V 40 60 50 40 30 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics 10 Fig 2. Typical Saturation Voltage Characteristics 30 4 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 25 3 40A 2 Load Current [A] Collector - Emitter Voltage, VCE [V] 1 Collector - Emitter Voltage, V CE [V] 20A IC = 10A 20 15 10 1 5 Duty cycle : 50% TC = 100℃ Power Dissipation = 32W 0 0 0 30 60 90 120 0.1 150 1 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25℃ Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] Case Temperature, TC [℃] 16 12 8 40A 4 20A IC = 10A 0 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGH40N60UFD Rev. A1 Cies Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ Switching Time [ns] Capacitance [pF] 300 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 2000 1500 1000 Coes SGH40N60UFD 2500 Ton Tr 100 500 Cres 0 10 1 10 1 30 10 Fig 7. Capacitance Characteristics 200 Fig 8. Turn-On Characteristics vs. Gate Resistance 2000 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ Toff 1000 Tf Tf 100 Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 25℃ T C = 125℃ Eon Eoff Eon Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Eoff 100 20 50 1 10 100 200 1 10 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time [nS] 100 Switching Time [ns] 200 Fig 10. Switching Loss vs. Gate Resistance 200 Ton Common Emitter V CC = 300V, V GE = ± 15V RG = 10Ω T C = 25℃ T C = 125℃ Tr 100 Gate Resistance, R G [Ω ] Common Emitter VCC = 300V, V GE = ± 15V RG = 10 Ω TC = 25℃ TC = 125℃ Toff Tf Toff 100 Tf 20 10 10 15 20 25 30 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 35 40 10 15 20 25 30 35 40 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH40N60UFD Rev. A1 Eoff Eon Eoff Eon Common Emitter V CC = 300V, VGE = ± 15V RG = 10Ω T C = 25℃ T C = 125℃ 10 10 15 20 25 30 35 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 1000 100 SGH40N60UFD 15 3000 Common Emitter RL = 15 Ω TC = 25℃ 12 9 300 V 6 V CC = 100 V 200 V 3 0 40 0 30 60 90 120 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 500 IC MAX. (Pulsed) 100 50us Collector Current, IC [A] Collector Current, I C [A] 100 100us IC MAX. (Continuous) 1㎳ 10 DC Operation 1 0.1 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area o VGE =20V, T C=100 C 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 Thermal Response, Zthjc [℃/W] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm single pulse t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1 Reverse Recovery Current, Irr [A] Forward Current, I F [A] 100 10 1 0 1 2 VR = 200V IF = 15A T C = 25℃ T C = 100℃ 10 1 100 3 Forward Voltage Drop, VF [V] 1000 di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 800 120 V R = 200V IF = 15A T C = 25℃ T C = 100℃ 600 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] SGH40N60UFD 100 T C = 25℃ T C = 100℃ 400 200 0 VR = 200V IF = 15A TC = 25℃ TC = 100℃ 100 80 60 40 20 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGH40N60UFD Rev. A1 TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1 SGH40N60UFD Package Dimension TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5