SGL40N150D
General Description
Features
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The SGL40N150D is designed for induction heating
applications.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
E
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.625
0.83
25
Units
°C/W
°C/W
°C/W
SGL40N150D Rev. A1
SGL40N150D
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
1500
---
----
-250
± 100
V
uA
nA
IC = 40mA, VCE = VGE
3.5
5.0
7.5
V
IC = 40A, VGE = 15V
--
3.7
4.7
V
VCE = 10V, VGE = 0V,
f = 1MHz
----
4000
700
300
----
pF
pF
pF
--------
90
230
245
230
140
25
45
200
700
400
400
170
25
60
ns
ns
ns
ns
nC
nC
nC
Min.
--
Typ.
1.3
Max.
1.8
Units
V
--
170
300
ns
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 51Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCE = 600V, IC = 40A,
VGE = 15V
Electrical Characteristics of DIODE T
C
= 25°C unless otherwise noted
Symbol
VFM
Parameter
Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A, di/dt = 200A/us
©2002 Fairchild Semiconductor Corporation
Test Conditions
SGL40N150D Rev. A1
SGL40N150D
Electrical Characteristics of the IGBT T
10V
o
T C = 25 C
100
Collector Current, IC [A]
o
TC = 25 C
12V
15V
o
60
Collector Current, IC [A]
80
Common Emitter
VGE = 15V
20V
Common Emitter
VGE = 8V
40
20
TC = 125 C
80
60
40
20
0
0
0
2
4
6
8
0
Collector - Emitter Voltage, VCE [V]
4
6
8
10
Fig 2. Typical Output Characteristics
6
6000
Common Emitter
VGE = 15V
IC = 80A
5
Common Emitter
V GE=0V, f=1MHz
5000
o
T C=25 C
C ies
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
2
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
IC = 40A
3
IC = 20A
2
1
4000
3000
2000
C oes
1000
C res
0
25
50
75
100
125
1
10
Collector - Emitter Voltage, V CE [V]
o
Case Temperature, TC [ C]
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
20
20
Common Emitter
Common Emitter
0
o
TC = 25 C
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
SGL40N150D
120
100
16
12
8
80A
40A
4
20A
0
T C = 125 C
16
12
8
80A
40A
20A
4
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGL40N150D Rev. A1
Common Emitter
VGE = ± 15V, RG = 51Ω
Common Emitter
VGE = ± 15V, RG = 51Ω
o
o
TC = 25 C
o
TC = 125 C
TC = 25 C
o
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tf
td(off)
td(on)
tr
100
tf
100
20
30
40
50
60
70
10
80
20
30
Collector Current, IC [A]
Fig 7. Turn-Off Characteristics vs.
Collector Current
T C = 25 C
1000
70
80
90
o
o
TC = 25 C
T C = 125 C
o
TC = 125 C
Switching Time [ns]
Switching Loss [ µJ]
60
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
o
Eoff
1000
50
Fig 8. Turn-On Characteristics vs.
Collector Current
Common Emitter
VG E = ± 15V, RG = 51Ω
10000
40
Collector Current, IC [A]
Eoff
Eon
tf
tf
td(off)
100
100
10
20
30
40
50
60
70
80
90
10
100
Gate Resistance, RG [Ω ]
Collector Current, IC [A]
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
Fig 9. Switching Loss vs. Collector Current
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
1000
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 40A
10000
o
o
TC = 25 C
o
TC = 125 C
Switching Loss [µJ]
Switching Time [ns]
TC = 25 C
tr
100
td(on)
o
TC = 125 C
Eoff
Eoff
Eon
1000
Eon
10
10
100
Gate Resistance, R G [Ω ]
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
10
100
Gate Resistance, RG [Ω ]
Fig 12. Switching Loss vs. Gate Resistance
SGL40N150D Rev. A1
SGL40N150D
1000
1000
IC MAX (Pulsed)
100
IC MAX (Continuous)
100µs
10
8
6
4
10
1ms
DC Operation
1
Single Nonrepetitive
o
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
2
0
0.01
0
25
50
75
100
125
150
0.1
1
Gate Charge, Qg [nC]
300
450
270
Reverse Recovery Time, t rr [ns]
Reverse Recovery Time, t rr [ns]
100
1000
Fig 14. SOA Characteristics
500
400
350
300
250
10
Collector - Emitter Voltage, VCE [V]
Fig 13. Gate Charge Characteristics
IF = 10A
200
150
100
50
240
di/dt = 50A/us
210
180
100A/us
150
200A/us
120
90
60
30
0
0
50
100
150
200
250
0
300
1
2
3
4
5
6
7
8
9
10
Forward Current, IF [A]
di/dt [A/us]
Fig 15. Typical Trr vs. di/dt
Fig 16. Typical Trr vs. Forward Current
100
Instantaneous Forward Current, I F [A]
1000
100
Reverse Current, I R [uA]
50µs
TC = 25 C
Collector Current, I C [A]
Gate - Emitter Voltage, VGE [V]
o
12
SGL40N150D
Common Emitter
R L = 15 Ω , VCC = 600V
14
TC = 125℃
10
100℃
1
25℃
0.1
0.01
10
TC =125℃
25℃
1
0.1
1E-3
300.0
600.0
900.0
1.2k
1.5k
Reverse Voltage, V R [V]
Fig 17. Reverse Current vs. Reverse Voltage
©2002 Fairchild Semiconductor Corporation
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Voltage, V F [V]
Fig 18. Typical Forward Voltage Drop
vs. Forward Current
SGL40N150D Rev. A1
SGL40N150D
Package Dimension
(8.30)
(1.00)
(2.00)
(7.00)
20.00 ±0.20
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
(7.00)
(2.00)
(11.00)
1.50 ±0.20
)
.20
.00
0 ±0
0)
2.0
(R
(R1
(0.50)
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGL40N150D Rev. A1
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
STAR*POWER™
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STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
