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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
•
50 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter.
C
G
TO-264
G
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
E
E
TC = 25C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
@ TC = 100C
@ TC = 25C
@ TC = 100C
Ratings
600
20
80
50
150
60
30
90
10
250
100
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
A
us
W
W
C
C
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
Typ.
----
1
Max.
0.5
1.0
25
Unit
C/W
C/W
C/W
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
November 2013
Symbol
Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 uA
600
--
--
V
VGE = 0 V, IC = 1 mA
--
0.6
--
V/C
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
---
---
250
± 100
uA
nA
5.0
---
6.0
2.2
2.5
8.5
2.8
--
V
V
V
----
3311
399
139
----
pF
pF
pF
---------------
26
89
66
118
1.68
1.03
2.71
28
91
68
261
1.7
2.31
4.01
--100
200
--3.8
--110
400
--5.62
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
10
--
--
us
-----
145
25
70
18
210
35
100
--
nC
nC
nC
nH
Min.
--
Typ.
1.9
Max.
2.8
Unit
--
1.8
--
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Ic = 50 mA, VCE = VGE
IC = 50 A, VGE = 15 V
IC = 80 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE=30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 125C
VCC = 300 V, VGE = 15 V
= 100C
@ TC
VCE = 300 V, IC = 50 A,
VGE = 15 V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
= 25C unless otherwise noted
Test Conditions
TC = 25C
IF = 30 A
TC = 100C
IF= 30 A,
diF/dt = 200 A/us
2
TC = 25C
--
70
100
TC = 100C
--
140
--
TC = 25C
--
6
7.8
TC = 100C
--
8
--
TC = 25C
--
200
360
TC = 100C
--
580
--
V
ns
A
nC
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT T
20V
140
15V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
120
Collector Current, I C [A]
Collector Current, I C [A]
120
12V
100
80
60
VGE = 10V
40
100
80
60
40
20
20
0
0
0
2
4
6
8
1
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60
VCC = 300V
Load Current : peak of square wave
[V]
Common Emitter
VGE = 15V
50
4
100A
Load Current [A]
CE
Collector - Emitter Voltage, V
10
Collector - Emitter Voltage, VCE [V]
3
50A
2
IC = 30A
1
40
30
20
10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 70W
0
0
-50
0
50
100
1
150
10
Case Temperature, T C [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
[V]
CE
16
Collector - Emitter Voltage, V
[V]
Common Emitter
T C = 25℃
CE
1000
Fig 4. Load Current vs. Frequency
20
Collector - Emitter Voltage, V
100
Frequency [KHz]
12
8
100A
4
50A
IC = 30A
Common Emitter
TC = 125℃
16
12
8
100A
4
50A
IC = 30A
0
0
0
4
8
12
16
0
20
12
16
20
Fig 6. Saturation Voltage vs. VGE
Fig 5. Saturation Voltage vs. VGE
SGL50N60RUFD Rev. C1
8
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
©1999 Fairchild Semiconductor Corporation
4
3
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Common Emitter
TC = 25℃
140
6000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
TC = 25℃ ━━
TC = 125℃ ------
5000
Cies
Ton
Switching Time [ns]
Capacitance [pF]
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
4000
3000
Coes
2000
Tr
100
Cres
1000
0
1
10
10
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
10000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
T C = 25℃ ━━
T C = 125℃ ------
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Eon
Switching Loss [uJ]
Switching Time [ns]
1000
100
Gate Resistance, RG [ ]
Collector - Emitter Voltage, VCE [V]
Toff
Tf
Eoff
Eoff
1000
Tf
100
10
100
10
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
1000
Common Emitter
VGE = ± 15V, RG = 5.9
T C = 25℃ ━━
T C = 125℃ ------
Ton
Switching Time [ns]
Switching Time [ns]
100
Gate Resistance, RG [ ]
Tr
100
Toff
Tf
Toff
100
Tf
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125℃ ------
10
10
20
40
60
80
100
10
Collector Current, IC [A]
SGL50N60RUFD Rev. C1
40
60
80
100
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
20
Fig 12. Turn-Off Characteristics vs.
Collector Current
4
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
7000
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125℃ ------
Eoff
Eoff
Eon
1000
Common Emitter
RL = 6
TC = 25℃
12
VCC = 100 V
300 V
200 V
9
6
3
0
100
10
20
40
60
80
100
0
30
Collector Current, IC [A]
60
90
120
150
180
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
50us
IC MAX. (Continuous)
Collector Current, I C [A]
Collector Current, I C [A]
100
100us
1㎳
DC Operation
10
1
0.1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
Safe Operating Area
VGE = 20V, TC = 100℃
10
100
1
1000
1
10
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Thermal Response, Zthjc [℃/W]
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
0.01
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
5
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
15
10000
[A]
VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
rr
Reverse Recovery Current, I
Forward Current, I F [A]
100
10
10
1
100
1
0
1
2
3
4
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
200
VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
160
Reverce Recovery Time, t
rr
1000
VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
180
[ns]
1200
rr
[nC]
1400
Stored Recovery Charge, Q
1000
di/dt [A/us]
Forward Voltage Drop, VFM [V]
800
600
400
200
0
100
100
80
60
40
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
SGL50N60RUFD Rev. C1
120
20
100
1000
©1999 Fairchild Semiconductor Corporation
140
Fig 21. Reverse Recovery Time
6
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
100
TC = 25℃ ━━
TC = 100℃ ------
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Mechanical Dimensions
Figure 22. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
8
www.fairchildsemi.com
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
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