SGP10N60RUFDTU

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The RUFD series is designed for applications such as motor control, Uninterrupted Power Supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • • 10 A, 600 V, TC = 100°C Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 10 A Typical Fall Time. . . . . . . . . .242ns at TJ = 125°C High Speed Switching High Input Impedance Short Circuit Rating Applications Motor Control, UPS, General Inverter C G GCE TO-220 Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL E TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C Ratings 600  20 16 10 30 24 12 92 10 75 30 -55 to +150 -55 to +150 Unit V V A A A A A A us W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 Typ. ---- 1 Max. 1.6 2.5 62.5 Unit C/W C/W C/W www.fairchildsemi.com SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT November 2013 Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 uA 600 -- -- V VGE = 0 V, IC = 1 mA -- 0.6 -- V/C VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V --- --- 250 ± 100 uA nA 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 660 115 25 ---- pF pF pF --------------- 15 30 36 158 141 215 356 16 33 42 242 161 452 613 --50 200 --500 --60 350 --860 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ 10 -- -- us ----- 30 5 8 7.5 45 10 16 -- nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Unit -- 1.3 -- Off Characteristics BVCES BVCES TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10 mA, VCE = VGE IC = 10 A, VGE = 15 V IC = 16 A, VGE = 15 V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 10 A, RG = 20 , VGE = 15 V, Inductive Load, TC = 25C VCC = 300 V, IC = 10 A, RG = 20 , VGE = 15 V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15 V = 100C @ TC VCE = 300 V, IC = 10 A, VGE = 15 V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 = 25C unless otherwise noted Test Conditions TC = 25C IF = 12 A TC = 100C IF = 12 A, diF/dt = 200 A/s 2 TC = 25C -- 42 60 TC = 100C -- 60 -- TC = 25C -- 3.5 6.0 TC = 100C -- 5.6 -- TC = 25C -- 80 180 TC = 100C -- 220 -- V ns A nC www.fairchildsemi.com SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT Electrical Characteristics of the IGBT T Common Emitter TC = 25℃ 35 15V 20V Collector Current, I C [A] [A] 30 C 12V 25 Collector Current, I Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 25 20 VGE = 10V 15 20 15 10 10 5 5 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 16 [V] Common Emitter V GE = 15 V CE VCC = 300V Load Current : peak of square wave 14 3.5 20 A Collector - Emitter Voltage, V 10 Collector - Emitter Voltage, VCE [V] 12 Load Current [A] 3.0 2.5 10 A 2.0 10 8 6 4 IC = 5 A 1.5 Duty cycle : 50% TC = 100℃ Power Dissipation = 18W 2 1.0 0 -50 0 50 100 0.1 150 1 10 Case Temperature, TC [? ] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, V CE [V] Common Emitter T C = 25℃ 16 CE [V] 1000 Fig 4. Load Current vs. Frequency 20 Collector - Emitter Voltage, V 100 Frequency [KHz] 12 8 20A 4 10A IC = 5A 0 16 12 8 20A 4 10A IC = 5A 0 0 4 8 12 16 20 0 Gate - Emitter Voltage, VGE [V] 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 4 Fig 6. Saturation Voltage vs. VGE 3 www.fairchildsemi.com SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT 30 40 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 1200 Common Emitter VCC = 300V, VGE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ Switching Time [ns] Capacitance [pF] 1000 Cies 800 600 400 SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT 1400 Ton Tr 100 Coes 200 Cres 0 10 1 10 10 Fig 7. Capacitance Characteristics Switching Time [ns] 1000 100 Gate Resistance, RG [ ] Collector - Emitter Voltage, VCE [V] Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = ± 15V IC = 10A T C = 25℃ ━━ T C = 125℃ ------ 1000 Switching Loss [uJ] Toff Common Emitter VCC = 300V, VGE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ Toff Tf Tf Eoff Eon Eoff 100 100 10 100 10 100 Gate Resistance, RG [ ] Gate Resistance, RG [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 20 TC = 25℃ ━━ TC = 125℃ ------ 100 Switching Time [ns] Switching Time [ns] Common Emitter VGE = ± 15V, RG = 20 TC = 25℃ ━━ TC = 125℃ -----Ton Tr Toff Tf Toff Tf 100 10 6 8 10 12 14 16 18 20 6 Collector Current, IC [A] 10 12 14 16 18 20 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 8 Fig 12. Turn-Off Characteristics vs. Collector Current 4 www.fairchildsemi.com Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 1000 Eoff 100 Eon 5 10 15 SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT 15 Common Emitter VGE = ± 15V, RG = 20 T C = 25℃ ━━ T C = 125℃ ------ Common Emitter RL = 30  TC = 25℃ 12 300 V VCC = 100 V 200 V 9 6 3 0 20 0 10 Collector Current, IC [A] 20 30 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 50 IC MAX. (Pulsed) [A] IC MAX. (Continuous) C 100us Collector Current, I Collector Current, I C [A] 50us 10 1㎳ DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 10 Safe Operating Area VGE = 20V, TC = 100℃ 1 0.1 0.1 1 10 100 1 1000 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 10 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 Duty factor D = t1 / t2 Peak Tj = Pdm  Zthjc + TC single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 5 www.fairchildsemi.com Reverse Recovery Current, I rr [A] F Forward Current, I VR = 200V IF = 12A TC = 25℃ ━━ TC = 100℃ ------ [A] 100 10 10 1 100 1 0 1 2 3 Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 100 VR=200V IF=12A T C = 25℃ ━━ T C = 100℃ ------ 80 rr [ns] VR = 200V IF = 12A TC = 25℃ ━━ TC = 100℃ ------ 400 Reverce Recovery Time, t Stored Recovery Charge, Q rr [nC] 600 500 1000 di/dt [A/us] Forward Voltage Drop, VFM [V] 300 200 100 0 100 40 20 0 100 1000 di/dt [A/us] 1000 di/dt [A/us] Fig 20. Stored Charge ©1999 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. C2 60 Fig 21. Reverse Recovery Time 6 www.fairchildsemi.com SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT 100 T C = 25℃ ━━ T C = 100℃ ------ SGP10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT Mechanical Dimensions Figure 22. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. 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