SGP5N60RUFD
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A
High input impedance
CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGP5N60RUFD
600
± 20
8
5
15
8
56
10
60
25
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
us
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
2.0
1.25
62.5
Units
°C/W
°C/W
°C/W
SGP5N60RUFD Rev. A1
SGP5N60RUFD
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 5mA, VCE = VGE
IC = 5A, VGE = 15V
IC = 8A, VGE = 15V
5.0
---
6.0
2.2
2.5
8.5
2.8
--
V
V
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
354
67
14
----
pF
pF
pF
---------------
13
24
34
136
88
107
195
13
26
40
250
103
220
323
--50
200
--280
--60
350
----
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
100°C
C
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2002 Fairchild Semiconductor Corporation
--
us
16
3
7
7.5
24
6
14
--
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Units
TC = 100°C
--
1.3
--
TC = 25°C
--
37
55
TC = 100°C
--
55
--
TC = 25°C
--
3.5
5.0
TC = 100°C
--
4.5
--
TC = 25°C
--
65
138
TC = 100°C
--
124
--
Measured 5mm from PKG
Parameter
VFM
--
-----
VCE = 300 V, IC = 5A,
VGE = 15V
Electrical Characteristics of DIODE T
Symbol
10
@ TC =
IF = 8A
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 8A,
di/dt = 200 A/us
V
ns
A
nC
SGP5N60RUFD Rev. A1
SGP5N60RUFD
Electrical Characteristics of the IGBT T
20
20V
Common Emitter
T C = 25℃
15V
15
12V
10
VGE = 10V
Common Emitter
V GE = 15V
T C = 25℃ ━━
T C = 125℃ ------
16
Collector Current, IC [A]
Collector Current, I C [A]
20
12
8
4
5
0
0
0
2
4
6
1
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 1. Typical Output Characteristics
10
4.0
VCC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
3.5
8
10A
3.0
Load Current [A]
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
2.5
5A
2.0
6
4
IC = 3A
2
1.5
Duty cycle : 50%
T C = 100℃
Power Dissipation = 12W
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, TC [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 25℃
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
SGP5N60RUFD
25
16
12
8
10A
4
5A
16
12
8
10A
4
5A
IC = 3A
IC = 3A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGP5N60RUFD Rev. A1
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
500
400
Switching Time [ns]
Capacitance [pF]
600
Cies
300
200
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 5A
TC = 25℃ ━━
TC = 125℃ ------
100
Ton
Tr
Coes
100
10
Cres
0
1
10
10
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, V CE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
1000
Switching Loss [uJ]
Switching Time [ns]
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 5A
TC = 25℃ ━━
TC = 125℃ -----Toff
Tf
Toff
Eoff
Eon
Eoff
100
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 5A
T C = 25℃ ━━
T C = 125℃ ------
Tf
100
10
10
100
10
Gate Resistance, R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 40 Ω
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
VGE = ± 15V, RG = 40 Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
100
Ton
Tr
Switching Time [ns]
Switching Time [ns]
100
Gate Resistance, R G [Ω ]
Tf
Toff
Toff
Tf
100
10
3
4
5
6
7
8
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
9
10
3
4
5
6
7
8
9
10
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP5N60RUFD Rev. A1
SGP5N60RUFD
700
15
Gate - Emitter Voltage, VGE [V]
Common Emitter
VGE = ± 15V, RG = 40Ω
T C = 25℃ ━━
T C = 125℃ ------
Switching Loss [uJ]
SGP5N60RUFD
1000
Eoff
100
Eon
Common Emitter
RL = 60Ω
T C = 25℃
12
300V
200V
VCC = 100V
9
6
3
0
3
4
5
6
7
8
9
0
10
3
6
9
12
15
18
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
50
40
Ic MAX. (Pulsed)
50us
1㎳
DC Operation
1
0.1
100us
Ic MAX. (Continuous)
Collector Current, I C [A]
Collector Current, IC [A]
10
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
10
100
1
1000
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristic
Thermal Response, Zthjc [℃/W]
10
1
0.5
0.2
0.1
0.05
0.1
Pdm
0.02
t1
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
single pulse
0.01
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGP5N60RUFD Rev. A1
100
VR = 200V
IF = 8A
TC = 25℃ ━━
TC = 100℃ ------
Reverse Recovery Current, I rr [A]
Forward Current, I F [A]
TC = 25℃ ━━
TC = 100℃ ------
10
1
10
1
0.1
0
1
2
100
3
1000
di/dt [A/us]
Forward Voltage Drop, VF [V]
Fig 19. Reverse Recovery Current
Fig 18. Forward Characteristics
100
500
V R = 200V
IF = 8A
T C = 25℃ ━━
T C = 100℃ ------
400
Reverce Recovery Time, t rr [ns]
Stored Recovery Charge, Qrr [nC]
SGP5N60RUFD
100
300
200
100
0
100
1000
di/dt [A/us]
Fig 20. Stored Charge
©2002 Fairchild Semiconductor Corporation
80
V R = 200V
IF = 8A
T C = 25℃ ━━
T C = 100℃ ------
60
40
20
0
100
1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
SGP5N60RUFD Rev. A1
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGP5N60RUFD Rev. A1
SGP5N60RUFD
Package Dimension
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
