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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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SGS10N60RUFD
600 V, 10 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
•
10 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 10 A
Typical Fall Time. . . . . . . . . .242ns at TJ = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter
C
G
G C E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
November 2013
E
TC = 25C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
@ TC = 100C
@ TC = 25C
@ TC = 100C
SGS10N60RUFD
600
20
16
10
30
24
12
92
10
55
22
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
A
s
W
W
C
C
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. C1
Typ.
----
1
Max.
2.3
3.7
62.5
Unit
C/W
C/W
C/W
www.fairchildsemi.com
C
Symbol
= 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 uA
600
--
--
V
VGE = 0 V, IC = 1 mA
--
0.6
--
V/C
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
---
---
250
± 100
A
nA
5.0
---
6.0
2.2
2.5
8.5
2.8
--
V
V
V
----
660
115
25
----
pF
pF
pF
---------------
15
30
36
158
141
215
356
16
33
42
242
161
452
613
--50
200
--500
--60
350
--860
ns
ns
nS
ns
J
J
J
ns
ns
ns
ns
J
J
J
10
--
--
s
-----
30
5
8
7.5
45
10
16
--
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Unit
--
1.3
--
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 10 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 16 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 10 A,
RG = 20 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 300 V, IC = 10 A,
RG = 20 , VGE = 15 V,
Inductive Load, TC = 125C
VCC = 300 V, VGE = 15 V
= 100C
@ TC
VCE = 300 V, IC = 10 A,
VGE = 15 V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2000 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. C1
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
Electrical Characteristics of IGBT T
= 25C unless otherwise noted
Test Conditions
TC = 25C
IF = 12 A
TC = 100C
IF = 12 A,
diF/dt = 200 A/s
2
TC = 25C
--
42
60
TC = 100C
--
60
--
TC = 25C
--
3.5
6.0
TC = 100C
--
5.6
--
TC = 25C
--
80
180
TC = 100C
--
220
--
V
ns
A
nC
www.fairchildsemi.com
Common Emitter
T C = 25℃
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
25
Collector Current, I C [A]
Collector Current, I C [A]
35
15V
20V
30
12V
25
20
VGE = 10V
15
20
15
10
10
5
5
0
0
0
2
4
6
8
1
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
16
Common Emitter
VGE = 15V
VCC = 300V
Load Current : peak of square wave
14
3.5
20A
12
Load Current [A]
Collector - Emitter Voltage, V CE [V]
4.0
3.0
2.5
10A
2.0
10
8
6
4
IC = 5A
1.5
Duty cycle : 50%
TC = 100℃
Power Dissipation = 15W
2
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, TC [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
TC = 125℃
Collector - Emitter Voltage, V CE [V]
Common Emitter
T C = 25℃
Collector - Emitter Voltage, V CE [V]
10
Collector - Emitter Voltage, VCE [V]
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
30
40
16
12
8
20A
4
10A
IC = 5A
0
16
12
8
20A
4
10A
IC = 5A
0
0
4
8
12
16
20
0
Gate - Emitter Voltage, VGE [V]
SGS10N60RUFD Rev. C1
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2000 Fairchild Semiconductor Corporation
4
Fig 6. Saturation Voltage vs. VGE
3
www.fairchildsemi.com
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
1200
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Switching Time [ns]
Capacitance [pF]
1000
Cies
800
600
400
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
1400
Ton
Tr
100
Coes
200
Cres
0
10
1
10
10
Fig 7. Capacitance Characteristics
Switching Time [ns]
1000
100
Gate Resistance, RG [ ]
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
T C = 25℃ ━━
T C = 125℃ ------
1000
Switching Loss [uJ]
Toff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Tf
Eoff
Eon
Eoff
100
100
10
100
10
100
Gate Resistance, RG [ ]
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 20
TC = 25℃ ━━
TC = 125℃ ------
100
Switching Time [ns]
Switching Time [ns]
Common Emitter
VGE = ± 15V, RG = 20
TC = 25℃ ━━
TC = 125℃ -----Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
18
20
6
Collector Current, IC [A]
SGS10N60RUFD Rev. C1
10
12
14
16
18
20
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor Corporation
8
Fig 12. Turn-Off Characteristics vs.
Collector Current
4
www.fairchildsemi.com
Gate - Emitter Voltage, V GE [ V ]
Switching Loss [uJ]
1000
Eoff
100
Eon
5
10
15
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
15
Common Emitter
VGE = ± 15V, RG = 20
T C = 25℃ ━━
T C = 125℃ ------
Common Emitter
RL = 30
TC = 25℃
12
300 V
VCC = 100 V
200 V
9
6
3
0
20
0
10
Collector Current, IC [A]
20
30
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
50
100
IC MAX. (Pulsed)
C
100us
1㎳
Collector Current, I
Collector Current, I C [A]
IC MAX. (Continuous)
[A]
50us
10
1
DC Operation
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
1
Safe Operating Area
VGE = 20V, TC = 100℃
1
0.01
0.1
10
10
100
1
1000
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response, Zthjc [℃/W]
10
0.5
1
0.2
0.1
0.05
0.1
0.02
Pdm
0.01
t1
t2
single pulse
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
-5
10
10
-4
-3
-2
10
10
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2000 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. C1
5
www.fairchildsemi.com
Reverse Recovery Current, I
rr
[A]
F
Forward Current, I
VR = 200V
IF = 12A
TC = 25℃ ━━
TC = 100℃ ------
[A]
100
10
10
1
100
1
0
1
2
3
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
100
VR=200V
IF=12A
T C = 25℃ ━━
T C = 100℃ ------
80
rr
[ns]
VR = 200V
IF = 12A
TC = 25℃ ━━
TC = 100℃ ------
400
Reverce Recovery Time, t
Stored Recovery Charge, Q
rr
[nC]
600
500
1000
di/dt [A/us]
Forward Voltage Drop, VFM [V]
300
200
100
0
100
di/dt [A/us]
20
1000
di/dt [A/us]
Fig 20. Stored Charge
SGS10N60RUFD Rev. C1
40
0
100
1000
©2000 Fairchild Semiconductor Corporation
60
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
100
T C = 25℃ ━━
T C = 100℃ ------
Fig 21. Reverse Recovery Time
6
www.fairchildsemi.com
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
Package Dimensions
Figure 22. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2000 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. C1
8
www.fairchildsemi.com
SGS10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT
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