IGBT
SGS10N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
G C E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGS10N60RUF
600
± 20
16
10
30
10
55
22
-55 to +150
-55 to +150
Units
V
V
A
A
A
µs
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Typ.
---
Max.
2.3
62.5
Units
°C/W
°C/W
SGS10N60RUF Rev. A
SGS10N60RUF
April 2001
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
µA
nA
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 16A, VGE = 15V
5.0
---
6.0
2.2
2.5
8.5
2.8
--
V
V
V
----
660
115
25
----
pF
pF
pF
---------------
15
30
36
158
141
215
356
16
33
42
242
161
452
613
--50
200
--500
--60
350
--860
ns
ns
nS
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
100°C
@ TC =
VCE = 300 V, IC = 10A,
VGE = 15V
Measured 5mm from PKG
10
--
--
µs
-----
30
5
8
7.5
45
10
16
--
nC
nC
nC
nH
SGS10N60RUF Rev. A
SGS10N60RUF
Electrical Characteristics of IGBT T
Common Emitter
T C = 25℃
35
15V
20V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
25
Collector Current, IC [A]
Collector Current, IC [A]
SGS10N60RUF
30
40
30
12V
25
20
V GE = 10V
15
20
15
10
10
5
5
0
0
0
2
4
6
1
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
16
Common Emitter
V GE = 15V
VCC = 300V
Load Current : peak of square wave
14
3.5
20A
12
Load Current [A]
Collector - Emitter Voltage, VCE [V]
4.0
3.0
2.5
10A
2.0
10
8
6
4
IC = 5A
1.5
Duty cycle : 50%
TC = 100℃
Power Dissipation = 15W
2
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, T C [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Common Emitter
TC = 25℃
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, V CE [V]
16
12
8
20A
4
10A
IC = 5A
0
16
12
8
20A
4
10A
IC = 5A
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
SGS10N60RUF Rev. A
SGS10N60RUF
1400
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
1200
Switching Time [ns]
Capacitance [pF]
1000
Cies
800
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 10A
T C = 25℃ ━━
T C = 125℃ ------
600
400
Ton
Tr
100
Coes
200
Cres
10
0
1
10
10
Fig 7. Capacitance Characteristics
Switching Time [ns]
1000
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
1000
Switching Loss [uJ]
Toff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Tf
Eoff
Eon
Eoff
100
100
10
100
10
100
Gate Resistance, R G [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
100
Switching Time [ns]
Switching Time [ns]
Common Emitter
V GE = ± 15V, RG = 20Ω
T C = 25℃ ━━
T C = 125℃ -----Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS10N60RUF Rev. A
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
1000
Eoff
100
Eon
SGS10N60RUF
15
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
RL = 30 Ω
TC = 25℃
12
300 V
VCC = 100 V
200 V
9
6
3
0
5
10
15
20
0
10
Collector Current, IC [A]
20
30
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
50
100
IC MAX. (Pulsed)
Collector Current, IC [A]
IC MAX. (Continuous)
Collector Current, I C [A]
50us
10
100us
1㎳
1
DC Operation
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
Safe Operating Area
V GE = 20V, T C = 100℃
1
0.01
0.1
10
1
10
100
1
1000
10
100
1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response, Zthjc [℃/W]
10
0.5
1
0.2
0.1
0.05
0.1
0.02
Pdm
0.01
t1
t2
single pulse
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
3.30 ±0.10
TO-220F (FS PKG CODE AQ)
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
SGS10N60RUF
Package Dimension
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1
