IGBT
SGS13N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A
High input impedance
CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
G C E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGS13N60UFD
600
± 20
13
6.5
52
8
56
45
18
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Typ.
----
Max.
2.7
1.7
62.5
Units
°C/W
°C/W
°C/W
SGS13N60UFD Rev. A
SGS13N60UFD
April 2001
Symbol
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
µA
nA
3.5
---
4.5
2.1
2.6
6.5
2.6
--
V
V
V
----
375
63
13
----
pF
pF
pF
-------------------
20
27
70
97
85
95
180
30
32
85
168
180
165
345
25
7
8
7.5
--130
150
--270
--200
250
--500
35
12
14
--
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Units
TC = 100°C
--
1.3
--
TC = 25°C
--
37
55
TC = 100°C
--
55
--
TC = 25°C
--
3.5
5.0
TC = 100°C
--
4.5
--
TC = 25°C
--
65
138
TC = 100°C
--
124
--
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 6.5mA, VCE = VGE
IC = 6.5A, VGE = 15V
IC = 13A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 6.5A,
RG = 50Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 6.5A,
RG = 50Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 6.5A,
VGE = 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2001 Fairchild Semiconductor Corporation
IF = 8A
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 8A,
di/dt = 200A/µs
V
ns
A
nC
SGS13N60UFD Rev. A
SGS13N60UFD
Electrical Characteristics of IGBT T
30
Common Emitter
TC = 25℃
25
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
20V
50
15V
40
30
12V
20
20
15
10
V GE = 10V
10
5
0
0
0
2
4
6
8
0.5
Collector - Emitter Voltage, VCE [V]
1
10
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
10
VCC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
8
13A
3
Load Current [A]
Collector - Emitter Voltage, VCE [V]
SGS13N60UFD
60
6.5A
2
IC = 3A
6
4
1
2
0
Duty cycle : 50%
TC = 100℃
Power Dissipation = 10W
0
0
30
60
90
120
150
0.1
1
Case Temperature, TC [℃]
10
100
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 25℃
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
1000
16
12
8
13A
4
6.5A
IC = 3A
0
16
12
8
13A
4
6.5A
IC = 3A
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGS13N60UFD Rev. A
300
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
500
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 6.5A
T C = 25℃
T C = 125℃
Switching Time [ns]
Capacitance [pF]
Cies
400
300
Coes
200
100
SGS13N60UFD
600
Ton
100
Tr
Cres
0
10
1
10
30
1
10
Fig 7. Capacitance Characteristics
600
Switching Time [ns]
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 6.5A
T C = 25℃
T C = 125℃
Eon
Toff
Toff
Tf
100
Tf
50
Eoff
Eon
Eoff
100
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 6.5A
T C = 25℃
T C = 125℃
10
1
400
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Switching Loss [uJ]
600
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, V CE [V]
10
100
300
1
10
Gate Resistance, R G [Ω ]
100
400
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
Switching Time [ns]
100
Common Emitter
VCC = 300V, V GE = ± 15V
RG = 50Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 50Ω
TC = 25℃
TC = 125℃
Ton
Toff
Toff
Tf
100
Tf
Tr
50
10
0
2
4
6
8
10
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
12
14
0
2
4
6
8
10
12
14
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS13N60UFD Rev. A
Common Emitter
RL = 46 Ω
Tc = 25℃
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
15
Common Emitter
V CC = 300V, V GE = ± 15V
RG = 50Ω
T C = 25℃
T C = 125℃
100
Eon
Eon
10
SGS13N60UFD
500
Eoff
12
9
300 V
6
200 V
VCC = 100 V
3
Eoff
0
5
0
2
4
6
8
10
12
14
0
5
10
15
20
25
Gate Charge, Qg [ nC ]
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
50us
10
Collector Current, I C [A]
Collector Current, I C [A]
IC MAX. (Pulsed)
100us
IC MAX. (Continuous)
1㎳
DC Operation
1
0.1
0.05
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linerarly with increase
in temperature
0.3
10
1
Safe Operating Area
o
V GE=20V, T C=100 C
0.1
1
10
100
1000
1
10
Collector-Emitter Voltage, V CE [V]
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response, Zthjc [℃/W]
10
0.5
1
0.2
0.1
0.05
0.1
Pdm
0.02
t1
0.01
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
0.01
10
-5
10
-4
10
-3
-2
10
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
100
Reverse Recovery Current, I rr [A]
Forward Current, IF [A]
T C = 25℃
T C = 100℃
10
1
0.1
0
1
2
VR = 200V
IF = 8A
TC = 25℃
TC = 100℃
10
1
100
3
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
100
500
V R = 200V
IF = 8A
T C = 25℃
T C = 100℃
Reverce Recovery Time, t rr [ns]
400
1000
di/dt [A/us]
Forward Voltage Drop, V FM [V]
Stored Recovery Charge, Qrr [nC]
SGS13N60UFD
100
300
200
100
0
80
VR = 200V
IF = 8A
TC = 25℃
TC = 100℃
60
40
20
0
100
1000
di/dt [A/us]
Fig 20. Stored Charge
©2001 Fairchild Semiconductor Corporation
100
1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
SGS13N60UFD Rev. A
3.30 ±0.10
TO-220F (FS PKG CODE AQ)
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
SGS13N60UFD
Package Dimension
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1
