IGBT
SGS6N60UF
Ultra-Fast IGBT
General Description
Features
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
• High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
G C E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGS6N60UF
600
± 20
6
3
25
22
9
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Typ.
---
Max.
5.5
62.5
Units
°C/W
°C/W
SGS6N60UF Rev. A
SGS6N60UF
April 2001
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
µA
nA
IC = 3mA, VCE = VGE
IC = 3A, VGE = 15V
IC = 6A, VGE = 15V
3.5
---
4.5
2.1
2.6
6.5
2.6
--
V
V
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
220
22
7
----
pF
pF
pF
-------------------
15
25
60
70
57
25
82
22
32
80
122
65
46
111
15
5
4
7.5
--130
150
--120
--200
300
--170
22
8
6
--
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
nC
nC
nC
nH
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 3A,
RG = 80Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 3A,
RG = 80Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 3A,
VGE = 15V
Measured 5mm from PKG
SGS6N60UF Rev. A
SGS6N60UF
Electrical Characteristics of IGBT T
Collector Current, IC [A]
25
Collector Current, I C [A]
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
20V
Common Emitter
T C = 25℃
15V
20
15
12V
10
V GE = 10V
12
9
6
3
5
0
0
0
2
4
6
8
0.5
Collector - Emitter Voltage, V CE [V]
1
10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
5
V CC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
4
3
6A
2
3A
Load Current [A]
Collector - Emitter Voltage, VCE [V]
SGS6N60UF
15
30
IC = 1.5A
3
2
1
1
0
Duty cycle : 50%
TC = 100℃
Power Dissipation = 5W
0
0
30
60
90
120
0.1
150
1
Case Temperature, TC [℃]
10
100
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Common Emitter
T C = 25℃
Collector - Emitter Voltage, VCE [V]
1000
Frequency [KHz]
16
12
8
6A
4
3A
IC = 1.5A
16
12
8
6A
4
3A
IC = 1.5A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGS6N60UF Rev. A
100
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
350
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 3A
T C = 25℃
T C = 125℃
Switching Time [ns]
Capacitance [pF]
300
Cies
250
200
150
100
Tr
Cres
0
10
1
10
1
30
10
100
400
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
300
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 3A
TC = 25℃
TC = 125℃
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 3A
T C = 25℃
T C = 125℃
100
Eon
Switching Loss [uJ]
Switching Time [ns]
Ton
Coes
50
600
SGS6N60UF
400
Toff
Toff
Tf
100
Eoff
Eoff
10
Tf
50
5
1
10
100
400
1
10
Gate Resistance, R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
500
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 80Ω
TC = 25℃
TC = 125℃
Common Emitter
V CC = 300V, V GE = ± 15V
RG = 80Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Switching Time [ns]
400
Fig 10. Switching Loss vs. Gate Resistance
200
100
100
Gate Resistance, R G [Ω ]
Ton
Toff
100
Tf
Tr
10
50
1
2
3
4
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
5
6
1
2
3
4
5
6
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS6N60UF Rev. A
15
Common Emitter
V CC = 300V, VGE = ± 15V
RG = 80 Ω
T C = 25℃
T C = 125℃
Common Emitter
RL = 100 Ω
Tc = 25℃
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
100
SGS6N60UF
200
Eon
Eon
Eoff
10
12
9
300 V
6
200 V
VCC = 100 V
3
Eoff
0
5
1
2
3
4
5
6
0
3
6
9
12
15
Gate Charge, Qg [ nC ]
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
50
10
50us
Collector Current, IC [A]
Collector Current, I C [A]
Ic MAX. (Pulsed)
100us
Ic MAX. (Continuous)
1㎳
1
DC Operation
0.1
0.01
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linerarly with increase
in temperature
0.3
10
1
Safe Operating Area
o
VGE =20V, TC=100 C
1
10
100
0.1
1000
1
10
Collector-Emitter Voltage, V CE [V]
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [℃/W]
0.5
0.2
1
0.1
0.05
0.02
0.01
0.1
Pdm
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
0.01
10
-5
10
-4
10
-3
-2
10
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS6N60UF Rev. A
SGS6N60UF
Package Dimension
3.30 ±0.10
TO-220F (FS PKG CODE AQ)
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
SGS6N60UF Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1