SGW10N60RUFDTM

SGW10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E D2-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGW10N60RUFD 600 ± 20 16 10 30 12 92 10 75 30 -55 to +150 -55 to +150 Units V V A A A A A us W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---- Max. 1.6 2.5 40 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2002 Fairchild Semiconductor Corporation SGW10N60RUFD Rev. A1 SGW10N60RUFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 10mA, VCE = VGE IC = 10A, VGE = 15V IC = 16A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 660 115 25 ---- pF pF pF --------------- 15 30 36 158 141 215 356 16 33 42 242 161 452 613 --50 200 --500 --60 350 --860 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation -- us 30 5 8 7.5 45 10 16 -- nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- TC = 25°C -- 42 60 TC = 100°C -- 60 -- TC = 25°C -- 3.5 6.0 TC = 100°C -- 5.6 -- TC = 25°C -- 80 180 TC = 100°C -- 220 -- Measured 5mm from PKG C Parameter -- ----- VCE = 300 V, IC = 10A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC = = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 12A TC = 100°C IF = 12A, di/dt = 200A/us V ns A nC SGW10N60RUFD Rev. A1 SGW10N60RUFD Electrical Characteristics of the IGBT T Common Emitter TC = 25℃ 35 15V 20V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 25 Collector Current, IC [A] Collector Current, I C [A] SGW10N60RUFD 30 40 30 12V 25 20 V GE = 10V 15 20 15 10 10 5 5 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 16 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 14 3.5 20A 12 Load Current [A] Collector - Emitter Voltage, VCE [V] 4.0 3.0 2.5 10A 2.0 10 8 6 4 IC = 5A 1.5 Duty cycle : 50% T C = 100℃ Power Dissipation = 18W 2 0 1.0 -50 0 50 100 0.1 150 1 10 Case Temperature, T C [℃] 100 1000 Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, V CE [V] 16 12 8 20A 4 10A IC = 5A 0 16 12 8 20A 4 10A IC = 5A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE SGW10N60RUFD Rev. A1 SGW10N60RUFD 1400 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 1200 Switching Time [ns] Capacitance [pF] 1000 Cies 800 Common Emitter V CC = 300V, V GE = ± 15V IC = 10A T C = 25℃ ━━ T C = 125℃ ------ 600 400 Ton Tr 100 Coes 200 Cres 10 0 1 10 10 Fig 7. Capacitance Characteristics Switching Time [ns] 1000 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, V GE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ 1000 Switching Loss [uJ] Toff Common Emitter VCC = 300V, VGE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ Toff Tf Tf Eoff Eon Eoff 100 100 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 20 Ω TC = 25℃ ━━ TC = 125℃ ------ 100 Switching Time [ns] Switching Time [ns] Common Emitter V GE = ± 15V, RG = 20Ω T C = 25℃ ━━ T C = 125℃ -----Ton Tr Toff Tf Toff Tf 100 10 6 8 10 12 14 16 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 18 20 6 8 10 12 14 16 18 20 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGW10N60RUFD Rev. A1 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 1000 Eoff 100 Eon SGW10N60RUFD 15 Common Emitter VGE = ± 15V, RG = 20 Ω TC = 25℃ ━━ TC = 125℃ ------ Common Emitter RL = 30 Ω TC = 25℃ 12 300 V VCC = 100 V 200 V 9 6 3 0 5 10 15 20 0 10 Collector Current, IC [A] 20 30 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 50 IC MAX. (Pulsed) 10 Collector Current, I C [A] Collector Current, I C [A] 50us IC MAX. (Continuous) 100us 1㎳ DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 10 Safe Operating Area V GE = 20V, T C = 100℃ 1 0.1 0.1 1 10 100 1 1000 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 10 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGW10N60RUFD Rev. A1 SGW10N60RUFD 100 T C = 25℃ ━━ T C = 100℃ ------ Reverse Recovery Current, I rr [A] Forward Current, I F [A] 100 10 1 2 10 1 100 1 0 V R = 200V IF = 12A T C = 25℃ ━━ T C = 100℃ ------ 3 Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 100 V R = 200V IF = 12A T C = 25℃ ━━ T C = 100℃ ------ Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] 600 500 1000 di/dt [A/us] Forward Voltage Drop, VFM [V] 400 300 200 100 0 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation VR=200V IF=12A TC = 25℃ ━━ TC = 100℃ ------ 80 60 40 20 0 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGW10N60RUFD Rev. A1 SGW10N60RUFD Package Dimension 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGW10N60RUFD Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. 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