SGW23N60UFDTM

SGW23N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E D2-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGW23N60UFD 600 ± 20 23 12 92 12 92 100 40 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---- Max. 1.2 2.5 40 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2002 Fairchild Semiconductor Corporation SGW23N60UFD Rev. A1 SGW23N60UFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 720 100 25 ---- pF pF pF ------------------- 17 27 60 70 115 135 250 23 32 100 220 205 320 525 49 11 14 7.5 --130 150 --400 --200 250 --800 80 17 22 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 12A TC = 100°C IF = 12A, di/dt = 200A/us TC = 25°C -- 42 60 TC = 100°C -- 80 -- TC = 25°C -- 3.5 6.0 TC = 100°C -- 5.6 -- TC = 25°C -- 80 180 TC = 100°C -- 220 -- V ns A nC SGW23N60UFD Rev. A1 SGW23N60UFD Electrical Characteristics of the IGBT T 50 Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 20V 80 15V 60 12V Collector Current, IC [A] Collector Current, I C [A] Common Emitter T C = 25℃ VGE = 10V 40 20 40 30 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 20 VCC = 300V Load Current : peak of square wave Common Emitter VGE = 15V 3 24A 2 12A 15 Load Current [A] Collector - Emitter Voltage, VCE [V] SGW23N60UFD 100 IC = 6A 1 10 5 0 Duty cycle : 50% T C = 100℃ Power Dissipation = 21W 0 0 30 60 90 120 150 0.1 1 Case Temperature, TC [℃] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] 16 12 8 24A 4 12A IC = 6A 16 12 8 24A 4 12A IC = 6A 0 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGW23N60UFD Rev. A1 200 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 1000 100 800 600 Coes 400 200 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ Tr Cres 0 10 1 10 30 1 10 Fig 7. Capacitance Characteristics 1000 Common Emitter V CC = 300V, V GE = ± 15V IC = 12A T C = 25℃ T C = 125℃ Eoff Switching Loss [uJ] Toff Toff Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ 100 Tf 50 30 1 10 100 200 1 10 Gate Resistance, R G [Ω ] 100 200 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 1000 Common Emitter V CC = 300V, VGE = ± 15V RG = 23Ω TC = 25℃ TC = 125℃ Common Emitter V CC = 300V, V GE = ± 15V RG = 23 Ω T C = 25℃ T C = 125℃ Switching Time [ns] Switching Time [ns] 200 Fig 8. Turn-On Characteristics vs. Gate Resistance Tf 100 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Switching Time [ns] Ton Switching Time [ns] Capacitance [pF] Cies 1000 SGW23N60UFD 1200 Ton Toff Tf Toff 100 Tr Tf 10 50 4 8 12 16 20 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 24 4 8 12 16 20 24 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGW23N60UFD Rev. A1 Eoff Eon Common Emitter V CC = 300V, V GE = ± 15V RG = 23Ω T C = 25℃ T C = 125℃ Eon Eoff Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 100 10 Common Emitter RL = 25 Ω TC = 25℃ 12 9 300 V 6 3 8 12 16 20 24 0 10 Collector Current, IC [A] 40 50 200 100 IC MAX. (Pulsed) 50us Collector Current, IC [A] Collector Current, IC [A] 30 Fig 14. Gate Charge Characteristics 300 100us IC MAX. (Continuous) 10 1㎳ DC Operation 0.1 20 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current 1 200 V VCC = 100 V 0 4 100 SGW23N60UFD 15 1000 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area VGE = 20V, TC = 100℃ 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 5 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0.005 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGW23N60UFD Rev. A1 SGW23N60UFD 100 T C = 25℃ T C = 100℃ Reverse Recovery Current, I rr [A] Forward Current, I F [A] 100 10 1 2 10 1 100 1 0 VR = 200V IF = 12A TC = 25℃ TC = 100℃ 3 di/dt [A/us] Forward Voltage Drop, V FM [V] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 100 V R = 200V IF = 12A T C = 25℃ T C = 100℃ Reverce Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 600 500 1000 400 300 200 100 0 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation VR = 200V IF = 12A TC = 25℃ TC = 100℃ 80 60 40 20 0 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGW23N60UFD Rev. A1 SGW23N60UFD Package Dimension 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGW23N60UFD Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. 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