HN1B01FDW1T1G,
SHN1B01FDW1T1G
Complementary Dual
General Purpose
Amplifier Transistor
www.onsemi.com
PNP and NPN Surface Mount
Features
•
•
•
•
•
•
High Voltage and High Current: VCEO = 50 V, IC = 200 mA
High hFE: hFE = 200X400
Moisture Sensitivity Level: 1
ESD Rating
♦ Human Body Model: 3A
♦ Machine Model: C
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SC−74
CASE 318F
STYLE 3
(6)
(5)
(4)
Q1
Q2
(1)
(2)
(3)
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C)
R9 MG
G
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
M
IC
200
mAdc
G
Rating
Collector Current − Continuous
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
R9
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
380
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Package
Shipping†
HN1B01FDW1T1G
SC−74 3,000/Tape & Reel
(Pb−Free)
SHN1B01FDW1T1G
SC−74 3,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1G, SHN1B01FDW1T1G
Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Min
Max
−50
−
−60
−
−7.0
−
−
−0.1
−
−
−
−0.1
−2.0
−1.0
−200
−400
−
−0.3
Min
Max
50
−
60
−
7.0
−
−
0.1
−
−
−
0.1
2.0
1.0
200
400
−
0.25
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
−
VCE(sat)
Vdc
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Vdc
Vdc
Vdc
mAdc
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2
mAdc
mAdc
mAdc
−
VCE(sat)
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Unit
Vdc
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS: PNP Transistor
1000
−1.5 mA
−2.0 mA
−160
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
−200
−1.0 mA
−120
−0.5 mA
−80
IB = −0.2 mA
−40
TA = 100°C
25°C
TA = 25°C
0
VCE = −1.0 V
10
0
−1
−2
−3
−4
−5
−6
−1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−25°C
100
VCE = −6.0 V
−100
−1000
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
hFE, DC CURRENT GAIN
TA = 100°C
−10
IC/IB = 10
TA = 100°C
25°C
−25°C
−0.1
−0.01
−1
−10
−100
−1000
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. VCE(sat) versus IC
−10
−10,000
COMMON EMITTER
VCE = 6 V
−1
TA = 25°C
IC/IB = 10
IB, BASE CURRENT (mA)
BASE−EMITTER SATURATION
VOLTAGE (V)
−1000
−1
IC, COLLECTOR CURRENT (mA)
−0.1
−1
−100
Figure 2. DC Current Gain
1000
10
−1
−10
IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region
25°C
−25°C
100
−1000
25°C
TA = 100°C
−25°C
−100
−10
−1
−0.1
−10
−100
−1000
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9
IC, COLLECTOR CURRENT (mA)
VBE, BASE−EMITTER VOLTAGE (V)
Figure 5. VBE(sat) versus IC
Figure 6. Base−Emitter Voltage
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3
−1
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS: NPN Transistor
1000
6.0 mA
5.0 mA
240
2.0 mA
3.0 mA
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
280
200
1.0 mA
160
120
0.5 mA
80
IB = 0.2 mA
TA = 100°C
25°C
−25°C
100
40
TA = 25°C
0
0
1
2
3
VCE = 1.0 V
10
4
5
6
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
TA = 100°C
25°C
−25°C
100
VCE = 6.0 V
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
Figure 8. DC Current Gain
1000
1
1
IC/IB = 10
TA = 100°C
25°C
0.1
−25°C
0.01
10
100
1000
1
10
IC, COLLECTOR CURRENT (mA)
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
Figure 10. VCE(sat) versus IC
10
10,000
COMMON EMITTER
VCE = 6 V
IB, BASE CURRENT (mA)
BASE−EMITTER SATURATION
VOLTAGE (V)
1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Voltage
10
100
1
TA = 25°C
IC/IB = 10
0.1
TA = 100°C
25°C
1000
−25°C
100
10
1
0.1
1
10
100
1000
0
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VBE, BASE−EMITTER VOLTAGE (V)
Figure 11. VBE(sat) versus IC
Figure 12. Base−Emitter Voltage
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4
0.9
1
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
NPN
100 ms 10 ms
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
PNP
1 ms
Thermal Limit
0.1
0.01
0.001
0.1
Single Pulse Test at TA = 25°C
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Thermal Limit
0.1
0.01
0.001
0.1
100
100 ms 10 ms 1 ms
1
Single Pulse Test at TA = 25°C
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. NPN Safe Operating Area
Figure 13. PNP Safe Operating Area
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5
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
SCALE 2:1
DATE 07 OCT 2021
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 10:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 11:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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