SMF05
ESD Protection Diode Array
Quad, Low Clamping Voltage
This quad monolithic silicon overvoltage suppressor is designed for
applications requiring transient voltage protection capability. It is
intended for use in ESD sensitive equipment such as computers,
printers, cell phones, medical equipment, and other applications. Its
quad junction common anode design protects four separate lines using
only one package. These devices are ideal for situations where board
space is at a premium.
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MARKING
DIAGRAM
4
5
Specification Features
•
•
•
•
•
•
SC−88A Package Allows Four Separate Unidirectional Configurations
Low Leakage < 5 mA @ 5 V
Breakdown Voltage: 6.1 V − 7.2 V @ 1 mA
Low Capacitance (90 pF TYP)
Provides Protection for IEC61000−4−2
Pb−Free Packages are Available*
Mechanical Characteristics
•
•
•
•
Void Free, Transfer−Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Applications
•
•
•
•
1
2
3
60 = Specific Device Code
d = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Cathode
Anode
Cathode
Computers
Printers
Cell Phones
Medical Equipment
60d G
G
SC−88A/SOT−353
CASE 419A−02
STYLE 5
SCALE 2:1
5
1
Cathode
2
4
3
Cathode
ORDERING INFORMATION
Device
SMF05T1
Package
Shipping†
SC−88A
3000 Tape & Reel
SMF05T1G
SC−88A 3000 Tape & Reel
(Pb−Free)
SMF05T2G
SC−88A
(Pb−Free)
3000 Tape & Reel
SMF05CT1
SC−88A
3000 Tape & Reel
SMF05CT1G
SMF05CT2
SMF05CT2G
SC−88A 3000 Tape & Reel
(Pb−Free)
SC−88A
3000 Tape & Reel
SC−88A 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
November, 2017 − Rev. 2
1
Publication Order Number:
SMF05/D
SMF05
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Ppk
200
W
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
VPP
16
9
kV
TL
260
°C
Peak Power Dissipation @ 8 X 20 ms @TA ≤ 25°C (Note 1)
ESD Discharge
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
Lead Solder Temperature (10 seconds duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current per Figure 2. Derate per Figure 3.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Breakdown Voltage
VBR @ 1 mA (Volts)
Device
Min
Max
Leakage Current
IR @ VRWM = 5 V
(mA)
SMF05
6.0
7.2
5.0
Max Clamping
Voltage (VC)
@ IPP
Max Clamping
Voltage (VC)
@ IPP
Capacitance
@ 0 V Bias
(pF)
Max
VF @ IF = 200 mA
(V)
IPP (A)
VC (V)
IPP (A)
VC (V)
90
1.25
1.0
9.5
12
12.5
TYPICAL PERFORMANCE CURVES
(TA = 25°C unless otherwise noted)
100
100
10
NOTE: Non−Repetitive Surge.
PEAK VALUE IRSM @ 8 ms
tr
90
% OF PEAK PULSE CURRENT
Ppk , PEAK SURGE POWER (WATTS)
1000
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
1
1
10
100
0
1000
0
20
40
60
t, TIME (ms)
t, TIME (ms)
Figure 1. Peak Power Dissipation versus
Pulse Width
Figure 2. Pulse Waveform 8 x 20 ms
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2
80
SMF05
TYPICAL PERFORMANCE CURVES
100
100
90
90
80
TYPICAL CAPACITANCE (pF)
PEAK POWER DISSIPATION (%)
(TA = 25°C unless otherwise noted)
70
60
50
40
30
20
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
f = 1 MHz
80
10
0
200
0
1.0
TA, AMBIENT TEMPERATURE (°C)
5.0
Figure 4. Junction Capacitance versus
Reverse Voltage
1.0
100
Ipp, PEAK PULSE CURRENT (AMPS)
IF , FORWARD CURRENT (A)
4.0
BIAS VOLTAGE (VOLTS)
Figure 3. Power Derating Curve
0.1
0.01
0.001
0.6
0.7
0.8
0.9
1.0
1.1
10
2.5 ms SQUARE WAVE
1.0
1.2
0
VF, FORWARD VOLTAGE (VOLTS)
2.5 ms SQUARE WAVE
10
1.0
2.0
4.0
6.0
8.0
10
15
20
25
Figure 6. Clamping Voltage versus Peak
Pulse Current (Reverse Direction)
100
0
5.0
VC, CLAMPING VOLTAGE (VOLTS)
Figure 5. Forward Voltage Curve
Ipp, PEAK PULSE CURRENT (AMPS)
3.0
2.0
10
12
VC, FORWARD CLAMPING VOLTAGE (VOLTS)
Figure 7. Clamping Voltage versus Peak
Pulse Current (Forward Direction)
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3
30
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE M
SCALE 2:1
DATE 11 APR 2023
GENERIC MARKING
DIAGRAM*
XXXMG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. EMITTER
3. BASE
4. COLLECTOR
5. CATHODE
STYLE 3:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
STYLE 4:
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
5. GATE 2
STYLE 6:
PIN 1. EMITTER 2
2. BASE 2
3. EMITTER 1
4. COLLECTOR
5. COLLECTOR 2/BASE 1
STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
STYLE 8:
PIN 1. CATHODE
2. COLLECTOR
3. N/C
4. BASE
5. EMITTER
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42984B
STYLE 5:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
SC−88A (SC−70−5/SOT−353)
PAGE 1 OF 1
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