SMMBFJ309LT1G

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel www.onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C Gate Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 6x M G = Device Code x = U for MMBFJ309L, SMMBFJ309L x = T for MMBFJ310L, SMMBFJ310L = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBFJ309LT1G, SMMBFJ309LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBFJ310LT1G, SMMBFJ310LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBFJ310LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 8 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc IGSS − − − − −1.0 −1.0 nAdc mAdc MMBFJ309 MMBFJ310, SMMBFJ310 VGS(off) −1.0 −2.0 − − −4.0 −6.5 Vdc MMBFJ309 MMBFJ310, SMMBFJ310 IDSS 12 24 − − 30 60 mAdc VGS(f) − − 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 − 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − − 250 mmhos Input Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − − 2.5 pF Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en − 10 − nVń ǸHz OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55°C 50 50 +25°C IDSS +25°C 40 40 30 30 +150°C 20 20 +25°C -55°C 10 10 +150°C -5.0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 10 1.0 k Yfs Yfs 10 k 100 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 120 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 100 0.01 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 9.0 ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common−Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate−Source Voltage www.onsemi.com 3 0 0 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE (μmhos) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 24 |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 S22 VDS = 10 V ID = 10 mA TA = 25°C 0.048 0.98 S21 Y11 18 1.8 Y21 12 1.2 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 Figure 4. Common−Gate Y Parameter Magnitude versus Frequency q21, q11 180° 50° 40° 160° 30° 150° 20° 140° 10° 200 300 500 f, FREQUENCY (MHz) q11, q12 -20° 120° q21, q22 -40° 86° -40° 100° 85° -60° 80° -120° 84° -80° 60° -100° 40° -120° 20° 100 0 q11 -20° q21 700 1000 Figure 5. Common−Gate S Parameter Magnitude versus Frequency q12, q22 -20° 87° q22 170° 0.036 0.96 S11 Y22 6.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 q21 q22 -20° -60° -80° -40° -100° q12 q11 130° 0° 100 -140° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) -60° q12 -160° 83° -180° 700 q21 -200° 82° 1000 Figure 6. Common−Gate Y Parameter Phase−Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 -80° -100° 1000 Figure 7. S Parameter Phase−Angle versus Frequency www.onsemi.com 4 0.90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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