MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
www.onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
COLLECTOR
3
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
2
EMITTER
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
ICM
−1200
mAdc
Symbol
Max
Unit
MARKING DIAGRAM
225
1.8
mW
mW/°C
556
°C/W
2F M G
G
300
2.4
mW
mW/°C
417
°C/W
350
mW
Collector Current − Continuous
Collector Current − Peak (Note 3)
3
SOT−23 (TO−236AB)
CASE 318
STYLE 6
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation − FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation − Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD
RJA
PD
Thermal Resistance, Junction−to−Ambient
RJA
Total Device Dissipation − Heat Spreader
or equivalent, (Note 4) @TA = 25°C
PD
Thermal Resistance, Junction−to−Ambient
RJA
357
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm2, 2 oz.
1
2F = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT2907ALT1G
SMMBT2907ALT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT2907ALT3G
SMMBT2907ALT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
October, 2016 − Rev. 15
1
Publication Order Number:
MMBT2907ALT1/D
MMBT2907AL, SMMBT2907AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−60
−60
−
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(IC = −1.0 mAdc, IB = 0)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
−0.010
−10
−
−50
75
100
100
100
50
−
−
−
300
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
ton
−
45
td
−
10
tr
−
40
toff
−
100
ts
−
80
tf
−
30
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
Vdc
Adc
IBL
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 5)
hFE
Collector −Emitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc) (Note 5)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 5, 6),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
Delay Time
Rise Time
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
Storage Time
Fall Time
ns
5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
6. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
-30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-30 V
200 ns
-6.0 V
1.0 k
1.0 k
0
50
-16 V
+15 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
MMBT2907AL, SMMBT2907AL
TYPICAL CHARACTERISTICS
1000
VCE = 10 V
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
100
-55°C
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
-1.0
-0.8
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.6
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0
-3.0
-20 -30
-5.0 -7.0 -10
-50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = -30 V
IC/IB = 10
TJ = 25°C
tf
30
20
td @ VBE(off) = 0 V
3.0
-5.0 -7.0 -10
30
10
7.0
5.0
-5.0 -7.0 -10
2.0 V
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT
100
70
50
t′s = ts - 1/8 tf
20
10
7.0
5.0
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
-200 -300 -500
Figure 5. Turn−On Time
-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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3
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = -1.0 mA, Rs = 430
-500 A, Rs = 560
-50 A, Rs = 2.7 k
-100 A, Rs = 1.6 k
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
0
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
Ceb
10
7.0
Ccb
5.0
3.0
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
50 k
400
300
200
100
80
VCE = -20 V
TJ = 25°C
60
40
30
20
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
1
1.1
IC/IB = 10
1.0
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC = -50 A
-100 A
-500 A
-1.0 mA
4.0
100
30
2.0
-0.1
6.0
2.0
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
150°C
25°C
−55°C
0.1
IC/IB = 10
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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4
1
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
+0.5
1.2
1.1
VCE = 1 V
0
0.9
COEFFICIENT (mV/ ° C)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RVC for VCE(sat)
-0.5
-1.0
-1.5
RVB for VBE
-2.0
0.3
0.2
0.001
0.01
0.1
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
1
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 13. Base Emitter Voltage vs. Collector
Current
Figure 14. Temperature Coefficients
10
1s
100 ms 10 ms 1 ms 100 s 10 s
1
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 10 Vdc, TA = 25°C
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 15. Safe Operating Area
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5
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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