MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
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Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Collector −Base Voltage
VCBO
−40
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−200
mAdc
ICM
−800
mAdc
Collector Current − Continuous
Collector Current − Peak (Note 3)
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−65 to +150
°C
PD
RqJA
MARKING DIAGRAM
2A M G
G
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
1
2A = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping†
Device
Package
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT3906LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SMMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT3906LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
August, 2017 − Rev. 13
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−40
−
−40
−
−5.0
−
−
−50
−
−50
60
80
100
60
30
−
−
300
−
−
−
−
−0.25
−0.4
−0.65
−
−0.85
−0.95
250
−
−
4.5
−
10
2.0
12
0.1
10
100
400
3.0
60
−
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hre
Small −Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
pF
kW
X 10− 4
−
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td
−
35
tr
−
35
(VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts
−
225
tf
−
75
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT3906L, SMMBT3906L
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
1N916
10 < t1 < 500 ms
10.9 V
t1
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Fall Time
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3
200
MMBT3906L, SMMBT3906L
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 10. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
Figure 11. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
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4
MMBT3906L, SMMBT3906L
TYPICAL STATIC CHARACTERISTICS
1000
VCE = 1 V
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
100
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
Figure 14. Collector Saturation Region
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5
2.0
3.0
5.0
7.0
10
MMBT3906L, SMMBT3906L
1.4
0.45
IC/IB = 10
IC/IB = 10
150°C
0.40
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.50
25°C
0.35
−55°C
0.30
0.25
0.20
0.15
0.10
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
VCE = 2 V
TA = 25°C
100
10
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector
Current
Figure 18. Current Gain Bandwidth vs.
Collector Current
1
1.0
0.5
1000
qVC FOR VCE(sat)
1 ms
1s
100 ms
+25°C TO +125°C
10 ms
Thermal Limit
0.1
0
-55°C TO +25°C
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
0.05
0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.2
-0.5
+25°C TO +125°C
0.01
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
Single Pulse Test
@ TA = 25°C
0.001
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
0.01
180 200
0.1
1
10
VCE (Vdc)
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
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6
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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