SMMBT4403LT1G

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc ICM −900 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W Collector Current − Continuous Collector Current − Peak 2 EMITTER 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM PD RqJA PD RqJA TJ, Tstg 300 2.4 mW mW/°C 417 °C/W °C −55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 2T M G G 1 2T M G = Specific Device Code* = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Device Package Shipping† MMBT4403LT1G SOT−23 3000 / Tape & Reel (Pb−Free) SMMBT4403LT1G SOT−23 3000 / Tape & Reel (Pb−Free) MMBT4403LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 13 1 Publication Order Number: MMBT4403LT1/D MMBT4403L, SMMBT4403L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV − −0.1 mAdc Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX − −0.1 mAdc 30 60 100 100 20 − − − 300 − − − − −0.4 −0.75 −0.75 − −0.95 −1.3 ON CHARACTERISTICS DC Current Gain hFE (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) (IC = −500 mAdc, VCE = −2.0 Vdc) (Note 3) (Note 3) Collector −Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) Base −Emitter Saturation Voltage (Note 3) VBE(sat) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT 200 − MHz Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 kW Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500 − Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos (VCC = −30 Vdc, VEB = −2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) td − 15 tr − 20 (VCC = −30 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) ts − 225 tf − 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW -16 V 200 W < 20 ns 1.0 kW CS* < 10 pF -16 V 10 to 100 ms, DUTY CYCLE = 2% 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time www.onsemi.com 2 CS* < 10 p MMBT4403L, SMMBT4403L TRANSIENT CHARACTERISTICS 25°C 100°C 100 10 7.0 5.0 VCC = 30 V IC/IB = 10 50 3.0 2.0 t, TIME (ns) Q, CHARGE (nC) IC/IB = 10 70 1.0 0.7 0.5 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 QT 0.3 10 QA 0.2 7.0 5.0 0.1 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 20 30 70 200 100 300 500 300 500 IC, COLLECTOR CURRENT (mA) Figure 3. Charge Data Figure 4. Turn−On Time 200 100 70 IC/IB = 10 VCC = 30 V IC/IB = 10 t s′, STORAGE TIME (ns) 50 t r , RISE TIME (ns) 50 30 20 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts - 1/8 tf 30 7.0 5.0 20 10 20 30 50 70 200 100 300 500 10 20 30 50 70 200 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Rise Time Figure 6. Storage Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 6 4 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW 2 IC = 50 mA 100 mA 500 mA 1.0 mA 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 6 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects www.onsemi.com 3 50k MMBT4403L, SMMBT4403L h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100k MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 50k 20k 10k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 9. Input Impedance 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Voltage Feedback Ratio Figure 11. Output Admittance www.onsemi.com 4 5.0 7.0 10 MMBT4403L, SMMBT4403L STATIC CHARACTERISTICS 450 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V h FE , DC CURRENT GAIN 400 350 TJ = 150°C 300 250 25°C 200 150 100 -55°C 50 0.001 0.0001 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 Figure 12. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.2 IC = 1.0 mA 10 mA 100 mA 500 mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 10 1 100 Ib, BASE CURRENT (mA) 0.35 0.5 IC/IB = 10 0.30 0 COEFFICIENT (mV/ °C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 13. Collector Saturation Region 0.25 150°C 0.20 25°C 0.15 0.10 qVC for VCE(sat) 0.5 1.0 1.5 -55°C qVS for VBE 2.0 0.05 0 0.0001 0.1 0.01 0.001 IC, COLLECTOR CURRENT (A) 2.5 0.1 0.2 1 Figure 14. Collector−Emitter Saturation Voltage vs. Collector Current 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 15. Temperature Coefficients www.onsemi.com 5 500 MMBT4403L, SMMBT4403L STATIC CHARACTERISTICS 1.0 IC/IB = 10 VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.3 0.0001 0.001 0.01 0.1 0.0001 1 IC, COLLECTOR CURRENT (A) 1 0.1 Figure 17. Base−Emitter Turn On Voltage vs. Collector Current 15 Cobo, OUTPUT CAPACITANCE (pF) 40 Cibo, INPUT CAPACITANCE (pF) 0.01 IC, COLLECTOR CURRENT (A) Figure 16. Base−Emitter Saturation Voltage vs. Collector Current 35 30 25 20 15 13 11 9 7 5 3 10 0 1 2 3 4 0 6 5 5 Veb, EMITTER BASE VOLTAGE (V) 1s 10 ms 1 ms 100 ms 100 Thermal Limit 10 1 0.1 1 15 20 25 30 40 35 Figure 19. Output Capacitance vs. Collector Base Voltage fT, CURRENT−GAIN−BANDWIDTH (MHz) 1000 10 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 18. Input Capacitance vs. Emitter Base Voltage IC, COLLECTOR CURRENT (mA) 0.001 10 100 1000 VCE = 1.0 V TA = 25°C 100 10 0.1 1 10 100 1000 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 20. Safe Operating Area Figure 21. Current−Gain−Bandwidth Product www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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