MMBT5401L, SMMBT5401L,
NSVMMBT5401L
High Voltage Transistor
PNP Silicon
www.onsemi.com
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23 (TO−236)
CASE 318
STYLE 6
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
COLLECTOR
3
1
BASE
2
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
2L M G
G
1
2L
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
Package
Shipping†
MMBT5401LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT5401LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
NSVMMBT5401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
December, 2017 − Rev. 14
1
Publication Order Number:
MMBT5401LT1/D
MMBT5401L, SMMBT5401L, NSVMMBT5401L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−150
−
−160
−
−5.0
−
−
−
−50
−50
50
60
50
−
240
−
−
−
−0.2
−0.5
−
−
−1.0
−1.0
100
300
−
6.0
40
200
−
8.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
Vdc
Vdc
Vdc
ICBO
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)
NF
pF
−
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
MMBT5401L, SMMBT5401L, NSVMMBT5401L
200
150
h FE, CURRENT GAIN
TJ = 125°C
100
25°C
70
50
-55°C
VCE = - 1.0 V
VCE = - 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
20
10
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
μ
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10-1
10-2
REVERSE
25°C
10-3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
www.onsemi.com
3
0.6
0.7
MMBT5401L, SMMBT5401L, NSVMMBT5401L
1.0
IC/IB = 10
0.18
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.20
0.15
0.13 150°C
0.10
25°C
0.08
0.05 −55°C
0.03
0.8
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0
0.0001
0.001
0.01
0.0001
0.1
IC, COLLECTOR CURRENT (A)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 10 V
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
2.5
1.5
1.0
0.5
-0.5
-1.0
-1.5
qVB for VBE(sat)
-2.0
-2.5
0.1
0.1
qVC for VCE(sat)
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 6. Base Emitter Voltage vs. Collector
Current
100
70
50
C, CAPACITANCE (pF)
VCC
-30 V
100
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 mF
3.0 k
RC
Vout
RB
5.1 k
Vin
100
50
100
Figure 7. Temperature Coefficients
10.2 V
Vin
0.1
TJ = - 55°C to 135°C
2.0
IC, COLLECTOR CURRENT (A)
VBB
+8.8 V
0.01
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
0.9
0.001
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
−55°C
0.9
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
Figure 8. Switching Time Test Circuit
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
www.onsemi.com
4
10
20
MMBT5401L, SMMBT5401L, NSVMMBT5401L
1000
700
500
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
300
1000
700
500
100
70
50
td @ VBE(off) = 1.0 V
VCC = 120 V
10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
tf @ VCC = 30 V
300
200
ts @ VCC = 120 V
30
50
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
50
100
200
1
IC, COLLECTOR CURRENT (A)
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
tf @ VCC = 120 V
100
70
50
30
20
IC/IB = 10
TJ = 25°C
VCE = 1 V
TA = 25°C
100
10
0.1
10 mSec
0.1
1 Sec
0.01
0.001
1
10
1
100
IC, COLLECTOR CURRENT (A)
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
www.onsemi.com
5
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative