SMMBTA56WT1G

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: • • www.onsemi.com ♦ ♦ Human Body Model − 4 kV Machine Model − 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−70 (SOT−323) CASE 419 STYLE 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc Collector−Base Voltage VCBO −80 Vdc Emitter−Base Voltage VEBO −4.0 Vdc IC −500 mAdc Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction to Ambient (Note 1) Junction and Storage Temperature Symbol Max Unit PD mW FM M G G 460 RqJA 272 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm2. 1 FM M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBTA56WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SMMBTA56WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SMMBTA56WT3G SC−70 (Pb−Free) 10,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 September, 2018 − Rev. 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTA56WT1/D MMBTA56W, SMMBTA56W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −80 − −4.0 − − −0.1 − − − −0.1 100 100 − − − −0.25 − −1.2 50 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = −60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) ICBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) VCE(sat) Base−Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V Vin tr = 3.0 ns OUTPUT RB 0 Vin * CS t 6.0 pF 5.0 mF RL RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2 200 100 VCE = -2.0 V TJ = 25°C TJ = 25°C 70 50 C, CAPACITANCE (pF) 100 70 50 20 Cobo 10 30 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 5.0 -0.1 -0.2 -200 -10 -20 Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance -1.0 k -700 -500 ts 1.0 ms 1.0 s TC = 25°C -200 100 70 50 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -30 -20 tr td @ VBE(off) = -0.5 V 10 -5.0 -7.0 -10 TA = 25°C -100 -70 -50 tf -50 -100 100 ms -300 200 30 -5.0 VR, REVERSE VOLTAGE (VOLTS) 300 20 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) Cibo 30 I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA56W, SMMBTA56W -10 -20 -30 -50 -70 -100 -200 -300 -500 -1.0 IC, COLLECTOR CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time Figure 5. Active−Region Safe Operating Area 400 -1.0 TJ = 25°C TJ = 125°C -0.8 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN VCE = -1.0 V 25°C -55°C 100 80 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 60 40 -0.5 -1.0 -2.0 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 -5.0 -10 -20 -50 -100 -200 0 -0.5 -500 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages www.onsemi.com 3 -500 -1.0 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBTA56W, SMMBTA56W TJ = 25°C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 -0.2 IC = -10 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -0.8 -1.2 -1.6 -2.0 RqVB for VBE -2.4 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient www.onsemi.com 4 -500 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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