MMJT350
Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line−operated
applications such as low power, line−operated series pass and
switching regulators requiring PNP capability.
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Features
•
•
•
•
•
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 2.75 WATTS
High Collector−Emitter Sustaining Voltage
Excellent DC Current Gain
Epoxy Meets UL 94 V−0 @ 0.125 in
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
4
1
2
3
SOT−223
CASE 318E
STYLE 1
A
Y
W
G
T350
AYW
T350 G
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
January, 2019 − Rev. 8
1
Shipping†
Device
Package
MMJT350T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
SMMJT350T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
SMMJT350T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMJT350T1/D
MMJT350
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎ
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ÎÎÎ
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ÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
300
Vdc
Collector−Base Voltage
VCB
300
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
0.5
Adc
Collector Current − Peak
ICM
0.75
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
PD
2.75
22
1.40
0.65
W
mW/°C
W
W
TJ, Tstg
– 55 to + 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Collector−Emitter Voltage
Collector Current − Continuous
Operating and Storage Junction Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
Junction−to−Case
Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
RqJC
RqJA
RqJA
45
85
190
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
TL
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
−
−
100
−
100
30
20
240
−
Unit
OFF CHARACTERISTICS
VCEO(SUS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0 Adc)
)
Collector−Base Current
(VCB = Rated VCBO, VEB = 0)
ICBO
Emitter Cut−off Current
(VBE = 5.0 Vdc)
IEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MMJT350
100
1.0
TJ = 150°C
TJ = 25°C
0.8
25°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
200
70
50
-55°C
30
20
VCE = 2.0 V
VCC = 10 V
10
5.0 7.0 10
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
IC/IB = 10
0.2
VCE(sat)
50 70 100
200
20 30
IC, COLLECTOR CURRENT (mA)
300
0
500
5.0 7.0
IC/IB = 5.0
10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
1000
700
500
300
+1.2
100ms
dc
200
100
70
50
30
20
10
20
500
Figure 2. “On” Voltages
1.0ms
500ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
θV, TEMPERATURE COEFFICIENTS (mV/°C)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200 300
50
100
200
300 400
30
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
+0.8
+100°C to +150°C
*APPLIES FOR IC/IB < hFE/4
+25°C to +100°C
+0.4
0
*qVC for VCE(sat)
-0.4
-55°C to +25°C
-0.8
+25°C to +150°C
-1.2
-1.6
qVB for VBE
-2.0
-55°C to +25°C
-2.4
-2.8
5.0 7.0
Figure 3. Active−Region Safe Operating Area
10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200 300
500
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
PD , POWER DISSIPATION (WATTS)
4.0
3.0
TC
2.0
1.0
TA
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 5. Power Derating
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3
125
150
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE
NC
CATHODE
STYLE 6:
PIN 1.
2.
3.
4.
RETURN
INPUT
OUTPUT
INPUT
STYLE 7:
PIN 1.
2.
3.
4.
ANODE 1
CATHODE
ANODE 2
CATHODE
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 8:
STYLE 12:
PIN 1. INPUT
2. OUTPUT
3. NC
4. OUTPUT
CANCELLED
DATE 02 OCT 2018
STYLE 4:
PIN 1.
2.
3.
4.
SOURCE
DRAIN
GATE
DRAIN
STYLE 5:
PIN 1.
2.
3.
4.
STYLE 9:
PIN 1.
2.
3.
4.
INPUT
GROUND
LOGIC
GROUND
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DRAIN
GATE
SOURCE
GATE
STYLE 13:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
GENERIC
MARKING DIAGRAM*
AYW
XXXXXG
G
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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