SMMSD103T1G

MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features http://onsemi.com  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOD−123 CASE 425 STYLE 1 MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 250 V Peak Forward Current IF 200 mA IFM(surge) 625 mA Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1) @ TA = 25C Derate above 25C PF 400 3.2 mW mW/C Peak Forward Surge Current 1 Cathode 2 Anode MARKING DIAGRAM THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RJL Thermal Resistance, Junction−to−Ambient RJA Junction and Storage Temperature Range TJ, Tstg 174 492 −55 to +150 1 JS M G G C/W JS = Device Code M = Date Code G = Pb−Free Package C/W (Note: Microdot may be in either location) C ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. Device Package Shipping† MMSD103T1G SOD−123 3,000 / Tape & Reel (Pb−Free) SMMSD103T1G SOD−123 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 6 1 Publication Order Number: MMSD103T1/D MMSD103T1G, SMMSD103T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max − − 1.0 100 250 − − − 1000 1250 − 5.0 − 50 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, TJ = 150C) IR Reverse Breakdown Voltage (IBR = 100 A) V(BR) Forward Voltage (IF = 100 mA) (IF = 200 mA) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD Reverse Recovery Time (IF = IR = 30 mA, RL = 100 ) trr A V mV pF ns 820  +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMSD103T1G, SMMSD103T1G TA = −55C 1000 800 REVERSE CURRENT (nA) 25C 150C 600 400 200 1 1 10 100 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 1000 TA = 150C TA = 25C TA = −55C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.75 Cd, DIODE CAPACITANCE (pF) FORWARD VOLTAGE (mV) 1200 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3 9 10 100 200 300 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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